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Title: Picosecond spin-orbit torque–induced coherent magnetization switching in a ferromagnet

Journal Article · · Science Advances
 [1];  [2];  [3];  [4];  [5];  [3];  [6];  [5];  [5];  [7]
  1. Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); University of California, Berkeley, CA (United States); SRM Institute of Science and Technology, Kattankulathur (India)
  2. University of California, Berkeley, CA (United States); University of San Francisco, CA (United States)
  3. University of California, Berkeley, CA (United States)
  4. Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Universite de Lorraine, Centre National de la Recherche Scientifique (CNRS), Nancy (France). Institut Jean Lamour (IJL)
  5. Universite de Lorraine, Centre National de la Recherche Scientifique (CNRS), Nancy (France). Institut Jean Lamour (IJL)
  6. Université Paris-Saclay, Centre National de la Recherche Scientifique (CNRS), Palaiseau (France). Centre de Nanosciences et de Nanotechnologies (C2N)
  7. Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); University of California, Berkeley, CA (United States)

Electrically controllable nonvolatile magnetic memories show great potential for the replacement of conventional semiconductor-based memory technologies. Here, we experimentally demonstrate ultrafast spin-orbit torque (SOT)-induced coherent magnetization switching dynamics in a ferromagnet. We use an ultrafast photoconducting switch and a coplanar strip line to generate and guide a ~9-picosecond electrical pulse into a heavy metal/ferromagnet multilayer to induce ultrafast SOT. We then use magneto-optical probing to investigate the magnetization dynamics with sub-picosecond resolution. Ultrafast heating by the approximately 9 picosecond current pulse induces a thermal anisotropy torque which, in combination with the damping-like torque, coherently rotates the magnetization to obtain zero-crossing of magnetization in ~70 picoseconds. A macro-magnetic simulation coupled with an ultrafast heating model agrees well with the experiment and suggests coherent magnetization switching without any incubation delay on an unprecedented time scale. Our work proposes a unique magnetization switching mechanism toward markedly increasing the writing speed of SOT magnetic random-access memory devices.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), High Energy Physics (HEP); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
2281212
Journal Information:
Science Advances, Vol. 9, Issue 36; ISSN 2375-2548
Publisher:
AAASCopyright Statement
Country of Publication:
United States
Language:
English

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