Aminodisilanes as silylating agents for dry-developed positive-tone resists for extreme ultraviolet (13.5) microlithography

Conference · Thu Feb 01 00:00:00 EST 1996

OSTI ID:220595

Wheeler, D ^[1]; Kubiak, G; Henderson, C; Ray-Chadhuri, A ^[2]

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1. Sandia National Labs., Albuquerque, NM (United States)
2. Sandia National Labs., Livermore, CA (United States)

We recently described a near-surface imaging scheme that employs disilanes and a bilayer resist scheme which together dramatically improve silicon contrast. A relatively thin 0.25 to 0.1 {mu}m imaging layer of a chemically amplified photo-crosslinking resist (Shipley XP-8844 or XP-9472) is spin coated on top of a thicker (0.25-0.5 {mu}m) layer of hard-baked resist (such as Shipley MP-1807). This bilayer scheme improves silicon contrast and provides additional advantages such as providing a planarizing layer and a processing layer.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 220595
• Report Number(s): SAND-96-0333C; CONF-960590-1; ON: DE96005899
• Resource Relation: Conference: Optical Society of America (OSA) topical meeting on extreme ultraviolet lithography, Boston, MA (United States), 1-3 May 1996; Other Information: PBD: [1996]
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
SILANES
DEPOSITION
MASKING
MATERIALS
SCREEN PRINTING
ETCHING
SILICON
DOPED MATERIALS
PERMEABILITY