Quantum efficiency of InGaN–GaN multi-quantum well solar cells: Experimental characterization and modeling

Caria, Alessandro; Nicoletto, Marco; De Santi, Carlo; Buffolo, Matteo; Huang, Xuanqi; Fu, Houqiang; Chen, Hong; Zhao, Yuji; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo

doi:10.1063/5.0076833

Title: Quantum efficiency of InGaN–GaN multi-quantum well solar cells: Experimental characterization and modeling

Journal Article · Wed Jun 08 00:00:00 EDT 2022 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0076833· OSTI ID:1979006

^[1]; Nicoletto, Marco ^[1];

^[1];

^[2];

^[3]; Chen, Hong ^[2]; Zhao, Yuji ^[4];

^[1]; Zanoni, Enrico ^[1];

^[1]

University degli Studi di Padova (Italy)
Arizona State University, Tempe, AZ (United States)
Iowa State University, Ames, IA (United States)
Arizona State University, Tempe, AZ (United States); Rice University, Houston, TX (United States)

InGaN-based multi-quantum well (MQW) solar cells are promising devices for photovoltaics (e.g., for tandem solar cells and concentrator systems), space applications, and wireless power transfer. In order to improve the efficiency of these devices, the factors limiting their efficiency and stability must be investigated in detail. Due to the complexity of a MQW structure, compared with a simple pn junction, modeling the spectral response of these solar cells is not straightforward, and ad hoc methodologies must be implemented. In this paper, we propose a model, based on material parameters and closed-formula equations, that describes the shape of the quantum efficiency of InGaN/GaN MQW solar cells, by taking into account the layer thickness, the temperature dependence of the absorption coefficient, and quantum confinement effects. We demonstrate (i) that the proposed model can effectively reproduce the spectral response of the cells; in addition, (ii) we prove that the bulk p-GaN layer absorbs radiation, but the carriers photogenerated in this region do not significantly contribute to device current. Finally, we show that (iii) by increasing the temperature, there is a redshift of the absorption edge due to bandgap narrowing, which can be described by Varshni law and is taken into account by the model, and a lowering in the extraction efficiency due to the increase in recombination (mostly Shockley–Read–Hall) inside the quantum wells, which is also visible by decreasing light intensity.

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Research Organization:: Arizona State Univ., Tempe, AZ (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0021230

OSTI ID:: 1979006

Alternate ID(s):: OSTI ID: 1871612

Journal Information:: Journal of Applied Physics, Vol. 131, Issue 22; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Quantum efficiency of InGaN–GaN multi-quantum well solar cells: Experimental characterization and modeling

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