Fully screen-printed bifacial large area 22.6% N-type Si solar cell with lightly doped ion-implanted boron emitter and tunnel oxide passivated rear contact
- Georgia Institute of Technology, Atlanta, GA (United States)
We report on the fabrication of fully screen-printed bifacial large area (239 cm2) high-efficiency n-type Si solar cells with ion-implanted homogeneous boron emitter on the front side and carrier-selective tunnel oxide passivated contact (TOPCon) on the rear. Our phosphorus-doped poly-Si/SiOx passivated contact with SiNx capping layer gave excellent surface passivation with a very low recombination current density (J0_TOPCon) of ~1 fA/cm2 after a simulated firing treatment at ~770 °C without metallization. After screen-printed and fire-through metallization on n-TOPCon with ~13% metal coverage, metallized J0_TOPCon value increased to only ~5 fA/cm2. In addition, homogenous boron implanted emitter (~180 Ω/sq) passivated with ALD Al2O3 layer capped with PECVD SiNx/SiOx double-layer antireflection (DLAR) coating gave excellent passivation with emitter recombination current density of ~12 fA/cm2 prior to metallization. The industrial screen-printed, fire-through contacts with floating busbars on this boron emitter gave metallized emitter recombination current density of ~31 fA/cm2. Furthermore, this resulted in a low-cost industrial screen-printed n-type bifacial Si solar cell with 22.6% efficiency and 702 mV open-circuit voltage (Voc).
- Research Organization:
- Georgia Institute of Technology, Atlanta, GA (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- Grant/Contract Number:
- EE0007554
- OSTI ID:
- 1893732
- Alternate ID(s):
- OSTI ID: 1619841; OSTI ID: 1893901
- Journal Information:
- Solar Energy Materials and Solar Cells, Vol. 214; ISSN 0927-0248
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
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