High-Frequency Performance of Submicrometer Transistors That Use Aligned Arrays of Single-Walled Carbon Nanotubes

Kocabas, Coskun; Dunham, Simon; Cao, Qing; Cimino, Kurt; Ho, Xinning; Kim, Hoon-Sik; Dawson, Dale; Payne, Joseph; Stuenkel, Mark; Zhang, Hong; Banks, Tony; Feng, Milton; Rotkin, Slava V.; Rogers, John A.

doi:10.1021/nl9001074

Title: High-Frequency Performance of Submicrometer Transistors That Use Aligned Arrays of Single-Walled Carbon Nanotubes

Journal Article · Wed Apr 08 00:00:00 EDT 2009 · Nano Letters

DOI:https://doi.org/10.1021/nl9001074· OSTI ID:1875464

Kocabas, Coskun ^[1]; Dunham, Simon ^[1]; Cao, Qing ^[1]; Cimino, Kurt ^[1]; Ho, Xinning ^[1]; Kim, Hoon-Sik ^[1]; Dawson, Dale ^[1]; Payne, Joseph ^[1]; Stuenkel, Mark ^[1]; Zhang, Hong ^[1]; Banks, Tony ^[1]; Feng, Milton ^[1]; Rotkin, Slava V. ^[1]; Rogers, John A. ^[1]

Univ. of Illinois at Urbana-Champaign, IL (United States); Northrop Grumman Electronics Systems, Linthicum, MD (United States); Lehigh Univ., Bethlehem, PA (United States)

The unique electronic properties of single-walled carbon nanotubes (SWNTs) make them promising candidates for next generation electronics, particularly in systems that demand high frequency (e.g., radio frequency, RF) operation. Transistors that incorporate perfectly aligned, parallel arrays of SWNTs avoid the practical limitations of devices that use individual tubes, and they also enable comprehensive experimental and theoretical evaluation of the intrinsic properties. Thus, devices consisting of arrays represent a practical route to use of SWNTs for RF devices and circuits. The results presented here reveal many aspects of device operation in such array layouts, including full compatibility with conventional small signal models of RF response. Submicrometer channel length devices show unity current gain (f_t) and unity power gain frequencies (f_max) as high as ~5 and ~9 GHz, respectively, with measured scattering parameters (S-parameters) that agree quantitatively with calculation. The small signal models of the devices provide the essential intrinsic parameters: saturation velocities of 1.2 × 10⁷ cm/s and intrinsic values of f_t of ~30 GHz for a gate length of 700 nm, increasing with decreasing length. Here, the results provide clear insights into the challenges and opportunities of SWNT arrays for applications in RF electronics.

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Research Organization:: Univ. of Illinois at Urbana-Champaign, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Science Foundation (NSF)

Grant/Contract Number:: FG02-07ER46471; FG02-07ER46453; NIRT-0403489

OSTI ID:: 1875464

Journal Information:: Nano Letters, Vol. 9, Issue 5; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Review of Electronics Based on Single-Walled Carbon Nanotubes Cao, Yu; Cong, Sen; Cao, Xuan Topics in Current Chemistry, Vol. 375, Issue 5 https://doi.org/10.1007/s41061-017-0160-5	journal	August 2017
High-Performance Partially Aligned Semiconductive Single-Walled Carbon Nanotube Transistors Achieved with a Parallel Technique Wang, Yilei; Pillai, Suresh Kumar Raman; Chan-Park, Mary B. Small, Vol. 9, Issue 17 https://doi.org/10.1002/smll.201203178	journal	February 2013
Wafer-scalable, aligned carbon nanotube transistors operating at frequencies of over 100 GHz Rutherglen, Christopher; Kane, Alexander A.; Marsh, Philbert F. Nature Electronics, Vol. 2, Issue 11 https://doi.org/10.1038/s41928-019-0326-y	journal	November 2019
Directed and On-Demand Alignment of Carbon Nanotube: A Review toward 3D Printing of Electronics Goh, Guo Liang; Agarwala, Shweta; Yeong, Wai Yee Advanced Materials Interfaces, Vol. 6, Issue 4 https://doi.org/10.1002/admi.201801318	journal	January 2019
Aligned, Ultralong Single-Walled Carbon Nanotubes: From Synthesis, Sorting, to Electronic Devices Liu, Zhongfan; Jiao, Liying; Yao, Yagang Advanced Materials, Vol. 22, Issue 21 https://doi.org/10.1002/adma.200904167	journal	March 2010
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