Subpicosecond Optical Stress Generation in Multiferroic BiFeO3
- University of Wisconsin, Madison, WI (United States)
- DePaul University, Chicago, IL (United States)
- Gwangju Institute of Science and Technology, Gwangju (South Korea)
- Pohang Accelerator Laboratory, Pohang (South Korea)
- Cornell University, Ithaca, NY (United States)
- Cornell University, Ithaca, NY (United States); Leibniz-Institut für Kristallzüchtung, Berlin (Germany)
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Korea Research Institute of Standards and Science, Daejeon (South Korea); University of Science and Technology, Daejeon (South Korea)
We report optical excitation leads to ultrafast stress generation in the prototypical multiferroic BiFeO3. The time scales of stress generation are set by the dynamics of the population of excited electronic states and the coupling of the electronic configuration to the structure. X-ray free-electron laser diffraction reveals high-wavevector subpicosecond-time scale stress generation following ultraviolet excitation of a BiFeO3 thin film. Stress generation includes a fast component with a 1/e rise time with an upper limit of 300 fs and longer-rise time components extending to 1.5 ps. The contributions of the fast and delayed components vary as a function of optical fluence, with a reduced a fast-component contribution at high fluence. The results provide insight into stress-generation mechanisms linked to the population of excited electrons and point to new directions in the application of nanoscale multiferroics and related ferroic complex oxides. The fast component of the stress indicates that structural parameters and properties of ferroelectric thin film materials can be optically modulated with 3 dB bandwidths of at least 0.5 THz.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; University of Wisconsin; Ministry of Science and ICT of Korea; National Research Foundation of Korea (NRF); GIST Research Institute
- Grant/Contract Number:
- AC02-06CH11357; FG02-04ER46147; DMR-1720415; SC0019414; 2020R1A2C2006127; 2021R1A5A1032996; 2017M3D1A1040828
- OSTI ID:
- 1874042
- Journal Information:
- Nano Letters, Vol. 22, Issue 11; ISSN 1530-6984
- Publisher:
- American Chemical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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