Dimensional reduction and ionic gating induced enhancement of superconductivity in atomically thin crystals of 2H-TaSe2
- Shanghai Jiao Tong Univ. (China)
- Tulane Univ., New Orleans, LA (United States)
- Tulane Univ., New Orleans, LA (United States); Pennsylvania State Univ., University Park, PA (United States)
- Shanghai Jiao Tong Univ. (China); Pennsylvania State Univ., University Park, PA (United States)
The effects of dimensional reduction and ion intercalation on superconductivity (SC) in the presence of charge density waves (CDWs) in two-dimensional crystals of 2H-TaSe2 were characterized. We prepared atomically thin crystals by mechanical exfoliation and performed electrical transport measurements on devices made by photolithography. The superconducting transition temperature ($$T$$ $$^{SC}_{c}$$) was found to increase monotonically as the thickness decreased, changing from 0.14 K in the bulk to higher than 1.4 K for a 3-nm-thick crystal. Here, the temperature dependence of upper critical field was found to be anomalous. The CDW transition temperature ($$T$$ $$^{CDW}_{c}$$) was found to decrease, but to a less extent than $$T$$ $$^{SC}_{c}$$, from 120 K in the bulk to around 113 K for the 3-nm-thick crystal. In addition, ion intercalation was found to increase $$T$$ $$^{SC}_{c}$$ and suppress $$T$$ $$^{CDW}_{c}$$ in an atomically thin crystal of 2H-TaSe2. The implications of these findings are discussed. We suggest that dimensional reduction and ion intercalation are potentially effective ways to engineer material properties for layered transition metal chalcogenides.
- Research Organization:
- Pennsylvania State Univ., University Park, PA (United States)
- Sponsoring Organization:
- USDOE; MOST; NSFC; National Science Foundation (NSF)
- Grant/Contract Number:
- SC0019068
- OSTI ID:
- 1868545
- Journal Information:
- Nanotechnology, Vol. 30, Issue 3; ISSN 0957-4484
- Publisher:
- IOP PublishingCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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