Exploring phase transitions and magnetoelectric coupling of epitaxial asymmetric multilayer heterostructures

Pradhan, Dhiren K.; Kumari, Shalini; Puli, Venkata S.; Pradhan, Dillip K.; Kumar, Ashok; Kalinin, Sergei V.; Vasudevan, Rama K.; Katiyar, Ram S.; Rack, Philip D.

doi:10.1039/d0tc02924f

Title: Exploring phase transitions and magnetoelectric coupling of epitaxial asymmetric multilayer heterostructures

Journal Article · Mon Jul 27 00:00:00 EDT 2020 · Journal of Materials Chemistry C

DOI:https://doi.org/10.1039/d0tc02924f· OSTI ID:1867228

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Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Pennsylvania State Univ., University Park, PA (United States)
Federal Univ. of Sao Carlos, Sao Paulo (Brazil)
National Institute of Technology, Rourkela (India)
National Physical Laboratory (CSIR), New Delhi (India)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Univ. of Puerto Rico, San Juan, PR (United States). Institute of Functional Nanomaterials

Magnetoelectric (ME) heterostructures can exhibit higher magnetic and ferroelectric ordering temperatures along with large ME coupling compared to single-phase multiferroic materials. We synthesized Pb(Fe_0.5Nb_0.5)O₃ (PFN)/Ni_0.65Zn_0.35Fe₂O₄ (NZFO)/Pb(Fe_0.5Nb_0.5)O₃ (PFN)/Ni_0.65Zn_0.35Fe₂O₄ (NZFO)/Pb(Fe_0.5Nb_0.5)O₃ (PFN) multilayer heterostructures having dimensions of 40/10/40/10/40 nm. High quality epitaxial growth of these heterostructures was confirmed via X-ray diffraction (XRD) and selected area electron diffraction (SAED) patterns. These nanostructures show well saturated polarization (~52 μC cm^-2) and magnetization (~62 emu cm^-3) at room temperature (RT). The magnetic and ferroelectric transitions occur well above RT. These heterostructures exhibit relaxor behavior and undergo 2nd order ferroelectric phase transition. Magnetodielectric measurements show significant coupling between the magnetic and electrical order parameters at RT. These characteristics of the heterostructures make them suitable as potential candidates for ultra-low power memory, spintronics, and different multifunctional (micro)nanoscale device applications.

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Research Organization:: Louisiana State Univ., Baton Rouge, LA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: SC0002136; Oak Ridge National Laboratory

OSTI ID:: 1867228

Alternate ID(s):: OSTI ID: 1647880

Journal Information:: Journal of Materials Chemistry C, Vol. 8, Issue 35; ISSN 2050-7526

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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