Leakage current conduction, hole injection, and time-dependent dielectric breakdown of n -4H-SiC MOS capacitors during positive bias temperature stress
|
journal
|
January 2017 |
Midgap levels in both n- and p-type 4H–SiC epilayers investigated by deep level transient spectroscopy
|
journal
|
March 2005 |
Native point defects and carbon clusters in 4H-SiC: A hybrid functional study
|
journal
|
March 2019 |
Electrically active defects in n -type 4H–silicon carbide grown in a vertical hot-wall reactor
|
journal
|
April 2003 |
Effect of Z 1/2 , EH 5 , and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies
|
journal
|
June 2014 |
Effect of threading screw and edge dislocations on transport properties of 4H–SiC homoepitaxial layers
|
journal
|
July 2010 |
Radiation detection using fully depleted 50 μ m thick Ni/n-4H-SiC epitaxial layer Schottky diodes with ultra-low concentration of Z 1 / 2 and E H 6 / 7 deep defects
|
journal
|
September 2020 |
Hard X-ray and -ray spectroscopy at high temperatures using a COTS SiC photodiode
- Bodie, C. S.; Lioliou, G.; Barnett, A. M.
-
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 985
https://doi.org/10.1016/j.nima.2020.164663
|
journal
|
January 2021 |
Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μ m epitaxial layers
|
journal
|
June 2021 |
Reduction of morphological defects in 4H-SiC epitaxial layers
|
journal
|
January 2019 |
The effects of large signals on charge collection in radiation detectors: Application to amorphous selenium detectors
|
journal
|
June 2006 |
Defects as qubits in and
|
journal
|
July 2015 |
Thermal and radiation response of 4H–SiC Schottky diodes with direct-write electrical contacts
|
journal
|
June 2020 |
Thick 4H-SiC epitaxial detectors for high-resolution radiation detection in harsh environment
|
conference
|
September 2020 |
Morphological features related to micropipe closing in 4H-SiC
|
journal
|
August 2005 |
Demonstration of 4H-SiC JFET Digital ICs Across 1000°C Temperature Range without Change to Input Voltages
|
journal
|
July 2019 |
SRIM – The stopping and range of ions in matter (2010)
- Ziegler, James F.; Ziegler, M. D.; Biersack, J. P.
-
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 11-12
https://doi.org/10.1016/j.nimb.2010.02.091
|
journal
|
June 2010 |
First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC
|
journal
|
February 2020 |
Electrical transport in n -type 4H silicon carbide
|
journal
|
August 2001 |
Silicon carbide detector for laser-generated plasma radiation
|
journal
|
May 2013 |
Improved performance of SiC radiation detector based on metal–insulator–semiconductor structures
- Jia, Yuping; Shen, Yutong; Sun, Xiaojuan
-
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 997
https://doi.org/10.1016/j.nima.2021.165166
|
journal
|
May 2021 |
Deep Levels in n-Type 4H-Silicon Carbide Epitaxial Layers Investigated by Deep-Level Transient Spectroscopy and Isochronal Annealing Studies
|
journal
|
April 2016 |
Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices
|
journal
|
May 2000 |
Correlation of Deep Levels With Detector Performance in 4H-SiC Epitaxial Schottky Barrier Alpha Detectors
|
journal
|
August 2014 |
Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
|
journal
|
July 1974 |
Deep Hole Traps in As-Grown 4H-SiC Epilayers Investigated by Deep Level Transient Spectroscopy
|
journal
|
October 2006 |
Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers
|
journal
|
April 2014 |
High temperature isotropic and anisotropic etching of silicon carbide using forming gas
|
journal
|
January 2021 |
Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy
|
journal
|
April 2013 |
The Evolution of Silicon Wafer Cleaning Technology
|
journal
|
January 1990 |
Thermal conductivity of 4H-SiC single crystals
|
journal
|
February 2013 |
Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach
|
journal
|
January 2013 |
Charge collection efficiency in the presence of non-uniform carrier drift mobilities and lifetimes in photoconductive detectors
|
journal
|
September 2020 |
High resolution alpha particle detectors based on 4H-SiC epitaxial layer
|
journal
|
April 2015 |
A method for the determination of the noise parameters in preamplifying systems for semiconductor radiation detectors
|
journal
|
November 1993 |
Characterization of silicon carbide and diamond detectors for neutron applications
|
journal
|
September 2017 |
Threshold displacement energies and displacement cascades in 4H-SiC: Molecular dynamic simulations
|
journal
|
May 2019 |
Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers
|
journal
|
May 2007 |
Electrical and noise properties of proton irradiated 4H-SiC Schottky diodes
|
journal
|
January 2018 |
Silicon Carbide Microstrip Radiation Detectors
|
journal
|
November 2019 |
High resolution alpha particle detection using 4H–SiC epitaxial layers: Fabrication, characterization, and noise analysis
- Chaudhuri, Sandeep K.; Zavalla, Kelvin J.; Mandal, Krishna C.
-
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 728
https://doi.org/10.1016/j.nima.2013.06.076
|
journal
|
November 2013 |
Development of high sensitivity 4H–SiC detectors for fission neutron pulse shape measurements
|
journal
|
August 2017 |
Electrical properties of the titanium acceptor in silicon carbide
|
journal
|
May 1997 |
High-Temperature Deep Level Transient Spectroscopy on As-Grown P-Type 4H-SiC Epilayers
|
journal
|
March 2006 |
Influence of the growth interface shape on the defect characteristics in the facet region of 4H-SiC single crystals
|
journal
|
February 2020 |
Investigation of 4H–SiC Schottky diodes by ion beam induced charge (IBIC) technique
|
journal
|
December 2001 |
Schottky barrier detectors on 4H-SiC n-type epitaxial layer for alpha particles
- Chaudhuri, S. K.; Krishna, R. M.; Zavalla, K. J.
-
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 701
https://doi.org/10.1016/j.nima.2012.11.015
|
journal
|
February 2013 |