Atomic-scale control of tunneling in donor-based devices

Wang, Xiqiao; Wyrick, Jonathan; Kashid, Ranjit V.; Namboodiri, Pradeep; Schmucker, Scott W.; Murphy, Andrew; Stewart, Jr., M. D.; Silver, Richard M.

doi:10.1038/s42005-020-0343-1

Title: Atomic-scale control of tunneling in donor-based devices

Journal Article · Mon May 11 00:00:00 EDT 2020 · Communications Physics

DOI:https://doi.org/10.1038/s42005-020-0343-1· OSTI ID:1842449

^[1]; Wyrick, Jonathan ^[2]; Kashid, Ranjit V. ^[2]; Namboodiri, Pradeep ^[2];

^[3]; Murphy, Andrew ^[4]; Stewart, Jr., M. D. ^[2]; Silver, Richard M. ^[2]

National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States); Univ. of Maryland, College Park, MD (United States)
National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)
Univ. of Maryland, College Park, MD (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States); Johns Hopkins Univ., Baltimore, MD (United States)

Atomically precise donor-based quantum devices are a promising candidate for solid-state quantum computing and analog quantum simulations. However, critical challenges in atomically precise fabrication have meant systematic, atomic scale control of the tunneling rates and tunnel coupling has not been demonstrated. Here using a room temperature grown locking layer and precise control over the entire fabrication process, we reduce unintentional dopant movement while achieving high quality epitaxy in scanning tunnelling microscope (STM)-patterned devices. Using the Si(100)2 × 1 surface reconstruction as an atomically-precise ruler to characterize the tunnel gap in precision-patterned single electron transistors, we demonstrate the exponential scaling of the tunneling resistance on the tunnel gap as it is varied from 7 dimer rows to 16 dimer rows. We demonstrate the capability to reproducibly pattern devices with atomic precision and a donor-based fabrication process where atomic scale changes in the patterned tunnel gap result in the expected changes in the tunneling rates.

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Research Organization:: Zyvex Labs, LLC, Richardson, TX (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: EE0008311

OSTI ID:: 1842449

Journal Information:: Communications Physics, Vol. 3, Issue 1; ISSN 2399-3650

Publisher:: Springer NatureCopyright Statement

Country of Publication:: United States

Language:: English

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