Total-Ionizing-Dose Effects on Read Noise of MLC 3-D NAND Memories T

Surendranathan, Umeshwarnath; Wasiolek, Maryla; Hattar, Khalid; Fleetwood, Daniel M.; Ray, Biswajit

doi:10.1109/tns.2021.3140204

Title: Total-Ionizing-Dose Effects on Read Noise of MLC 3-D NAND Memories T

Journal Article · Tue Jan 04 00:00:00 EST 2022 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/tns.2021.3140204· OSTI ID:1841982

Surendranathan, Umeshwarnath ^[1]; Wasiolek, Maryla ^[2]; Hattar, Khalid ^[2]; Fleetwood, Daniel M. ^[3]; Ray, Biswajit ^[1]

Univ. of Alabama, Huntsville, AL (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Vanderbilt Univ., Nashville, TN (United States)

This paper analyzes the total ionizing dose (TID) effects on noise characteristics of commercial multi-level-cell (MLC) 3-D NAND memory technology during the read operation. Additionally, the chips were exposed to a Co-60 gamma-ray source for up to 100 krad(Si) of TID. We find that the number of noisy cells in the irradiated chip increases with TID. Bit-flip noise was more dominant for cells in an erased state during irradiation compared to programmed cells.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Nuclear Energy (NE)

Grant/Contract Number:: NA0003525

OSTI ID:: 1841982

Report Number(s):: SAND-2022-0361J; 702506

Journal Information:: IEEE Transactions on Nuclear Science, Vol. 69, Issue 3; ISSN 0018-9499

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

References (25)

Error Instability in Floating Gate Flash Memories Exposed to TID Bagatin, Marta; Gerardin, Simone; Cellere, Giorgio IEEE Transactions on Nuclear Science, Vol. 56, Issue 6 https://doi.org/10.1109/TNS.2009.2033364	journal	December 2009
Radiation Induced Charge Trapping in Ultrathin ${\rm HfO}_{2}$-Based MOSFETs Dixit, Sriram K.; Zhou, Xing J.; Schrimpf, Ronald D. IEEE Transactions on Nuclear Science, Vol. 54, Issue 6 https://doi.org/10.1109/TNS.2007.911423	journal	December 2007
Radiation-Induced Charge Trapping and Low-Frequency Noise of Graphene Transistors Wang, P.; Perini, C.; O'Hara, A. IEEE Transactions on Nuclear Science, Vol. 65, Issue 1 https://doi.org/10.1109/TNS.2017.2761747	journal	January 2018
Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO₂ Gate Dielectrics Liang, C. D.; Ma, R.; Su, Y. IEEE Transactions on Nuclear Science, Vol. 65, Issue 6 https://doi.org/10.1109/TNS.2018.2828080	journal	June 2018
Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices Fleetwood, D. M.; Xiong, H. D.; Lu, Z. -Y. IEEE Transactions on Nuclear Science, Vol. 49, Issue 6 https://doi.org/10.1109/TNS.2002.805407	journal	December 2002
Estimating oxide‐trap, interface‐trap, and border‐trap charge densities in metal‐oxide‐semiconductor transistors Fleetwood, D. M.; Shaneyfelt, M. R.; Schwank, J. R. Applied Physics Letters, Vol. 64, Issue 15 https://doi.org/10.1063/1.111757	journal	April 1994
Gamma-Ray-Induced Error Pattern Analysis for MLC 3-D NAND Flash Memories Surendranathan, Umeshwarnath; Kumari, Preeti; Wasiolek, Maryla IEEE Transactions on Nuclear Science, Vol. 68, Issue 5 https://doi.org/10.1109/TNS.2021.3059186	journal	May 2021
1/f noise and radiation effects in MOS devices Fleetwood, D. M.; Meisenheimer, T. L.; Scofield, J. H. IEEE Transactions on Electron Devices, Vol. 41, Issue 11 https://doi.org/10.1109/16.333811	journal	January 1994
Directional Dependence of Co-60 Irradiation on the Total Dose Response of Flash Memories Gadlage, Matthew J.; Bruce, David I.; Ingalls, James D. IEEE Transactions on Nuclear Science, Vol. 66, Issue 1 https://doi.org/10.1109/TNS.2018.2879685	journal	January 2019
Total Ionizing Dose Effects in 3-D NAND Flash Memories Bagatin, Marta; Gerardin, Simone; Paccagnella, Alessandro IEEE Transactions on Nuclear Science, Vol. 66, Issue 1 https://doi.org/10.1109/TNS.2018.2878911	journal	January 2019
Effects of Scaling in SEE and TID Response of High Density NAND Flash Memories Irom, Farokh; Nguyen, Duc N.; Underwood, Mark L. IEEE Transactions on Nuclear Science https://doi.org/10.1109/TNS.2010.2084102	journal	December 2010
Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices Fleetwood, D. M. IEEE Transactions on Nuclear Science, Vol. 60, Issue 3 https://doi.org/10.1109/TNS.2013.2259260	journal	June 2013
Random Telegraph Noise Effect on the Programmed Threshold-Voltage Distribution of Flash Memories Compagnoni, C. M.; Ghidotti, M.; Lacaita, A. L. IEEE Electron Device Letters, Vol. 30, Issue 9 https://doi.org/10.1109/LED.2009.2026658	journal	September 2009
Total-Ionizing-Dose Effects, Border Traps, and 1/f Noise in Emerging MOS Technologies Fleetwood, Daniel M. IEEE Transactions on Nuclear Science, Vol. 67, Issue 7 https://doi.org/10.1109/TNS.2020.2971861	journal	July 2020
Aging Effects and Latent Interface-Trap Buildup in MOS Transistors Ding, Jiarui; Zhang, En Xia; Li, Kan IEEE Transactions on Nuclear Science, Vol. 68, Issue 12 https://doi.org/10.1109/TNS.2021.3128835	journal	December 2021
True Random Number Generation Using Read Noise of Flash Memory Cells Ray, Biswajit; Milenkovic, Aleksandar IEEE Transactions on Electron Devices, Vol. 65, Issue 3 https://doi.org/10.1109/TED.2018.2792436	journal	March 2018
Radiation response of floating gate EEPROM memory cells Snyder, E. S.; McWhorter, P. J.; Dellin, T. A. IEEE Transactions on Nuclear Science, Vol. 36, Issue 6 https://doi.org/10.1109/23.45415	journal	December 1989
Impact of temperature on the amplitude of RTN fluctuations in 3-D NAND flash cells Nicosia, G.; Mannara, A.; Resnati, D. 2017 IEEE International Electron Devices Meeting (IEDM) https://doi.org/10.1109/IEDM.2017.8268434	conference	December 2017
Software Support Inside and Outside Solid-State Devices for High Performance and High Efficiency Chen, Feng; Zhang, Tong; Zhang, Xiaodong Proceedings of the IEEE, Vol. 105, Issue 9 https://doi.org/10.1109/JPROC.2017.2679490	journal	September 2017
Radiation-Induced Error Mitigation by Read-Retry Technique for MLC 3-D NAND Flash Memory Kumari, Preeti; Surendranathan, Umeshwarnath; Wasiolek, Maryla IEEE Transactions on Nuclear Science, Vol. 68, Issue 5 https://doi.org/10.1109/TNS.2021.3052909	journal	May 2021
$1/f$ Noise and Defects in Microelectronic Materials and Devices Fleetwood, D. M. IEEE Transactions on Nuclear Science, Vol. 62, Issue 4 https://doi.org/10.1109/TNS.2015.2405852	journal	August 2015
Effects of Metal Gates and Back-End-of-Line Materials on X-Ray Dose in ${\rm HfO}_{2}$ Gate Oxide Dasgupta, Aritra; Fleetwood, Daniel M.; Reed, Robert A. IEEE Transactions on Nuclear Science, Vol. 58, Issue 6 https://doi.org/10.1109/TNS.2011.2169279	journal	December 2011
Layer-Dependent Bit Error Variation in 3-D NAND Flash Under Ionizing Radiation Kumari, Preeti; Huang, Sijay; Wasiolek, Maryla IEEE Transactions on Nuclear Science, Vol. 67, Issue 9 https://doi.org/10.1109/TNS.2020.3014261	journal	September 2020
Modeling the anneal of radiation-induced trapped holes in a varying thermal environment McWhorter, P. J.; Miller, S. L.; Miller, W. M. IEEE Transactions on Nuclear Science, Vol. 37, Issue 6 https://doi.org/10.1109/23.101177	journal	January 1990
Radiation Response of SNOS Nonvolatile Transistors McWhorter, P. J.; Miller, S. L.; Dellin, T. A. IEEE Transactions on Nuclear Science, Vol. 33, Issue 6 https://doi.org/10.1109/TNS.1986.4334615	journal	January 1986

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42 ENGINEERING
radiation effects
flash memories
noise measurement
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semiconductor device measurement
error correction codes
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noise
MLC
error rate
memory controller
total ionizing dose
single event exposure
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Title: Total-Ionizing-Dose Effects on Read Noise of MLC 3-D NAND Memories T

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