Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability
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May 2019 |
Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown
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February 2019 |
Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination
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June 2019 |
Two-Step Mesa Structure GaN p-n Diodes With Low ON-Resistance, High Breakdown Voltage, and Excellent Avalanche Capabilities
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January 2020 |
Deep GaN through-substrate via etching using Cl2/BCl3 inductively coupled plasma
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December 2020 |
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
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September 2016 |
GaN power devices: current status and future challenges
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May 2019 |
GaN-based light-emitting diodes on various substrates: a critical review
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April 2016 |
3D GaN-based betavoltaic device design with high energy transfer efficiency
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March 2019 |
Design considerations for three-dimensional betavoltaics
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June 2019 |
Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes
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July 2018 |
Switching Performance Analysis of Vertical GaN FinFETs: Impact of Interfin Designs
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April 2021 |
Implementation of the inductively coupled plasma etching processes for forming gallium nitride nanorods used in ultraviolet light-emitting diode technology
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July 2020 |
Ultrahigh GaN:SiO 2 etch selectivity by in situ surface modification of SiO 2 in a Cl 2 -Ar plasma
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November 2020 |
Ultradeep electron cyclotron resonance plasma etching of GaN
- Harrison, Sara E.; Voss, Lars F.; Torres, Andrea M.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 35, Issue 6
https://doi.org/10.1116/1.4994829
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November 2017 |
Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures
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December 2003 |
Nanofabrication of gallium nitride photonic crystal light-emitting diodes
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November 2010 |
Fabrication and properties of etched GaN nanorods
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November 2011 |
Effect of BCl3 concentration and process pressure on the GaN mesa sidewalls in BCl3/Cl2 based inductively coupled plasma etching
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July 2012 |
Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness
- Tahhan, Maher; Nedy, Joseph; Chan, Silvia H.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 3
https://doi.org/10.1116/1.4944054
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May 2016 |
Top-down fabrication of large-area GaN micro- and nanopillars
- Debnath, Ratan; Ha, Jong-Yoon; Wen, Baomei
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Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 32, Issue 2
https://doi.org/10.1116/1.4865908
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March 2014 |
Handbook of Basic Atomic Spectroscopic Data
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December 2005 |
Emissionspectroscopic Investigations On SiCl4 and Ccl4Si Plasmas for Etching Processes
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January 1990 |
Mechanism of silicon film deposition in the RF plasma reduction of silicon tetrachloride
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June 1986 |
On the excitation of CCl(A 2δ) in CCl4 and CCl4/rare gas discharges
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April 1987 |
A continuous emission in weakly excited CCl4 discharges. CCl3 as possible emitter
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August 1988 |
Comparative study of pulsed laser ablated plasma plumes from single crystal graphite and amorphous carbon targets. Part I. Optical emission spectroscopy
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December 2000 |
Molecular-beam study of the plasma-surface kinetics of silicon dioxide and photoresist etching with chlorine
- Chang, Jane P.; Sawin, Herbert H.
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 19, Issue 4
https://doi.org/10.1116/1.1387452
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January 2001 |
Influence of Halogen Plasma Atmosphere on SiO2Etching Characteristics
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November 1991 |
Reactivity of CCl4 plasma against SiO2 surfaces
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January 1983 |
Spectroscopic Investigation of the Reaction between Aluminum and Aluminum Chloride
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June 1950 |
Metal Al Produced by H 2 Plasma Reduction of AlCl 3 : A Thermodynamic and Kinetic Study on the Plasma Chemistry
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September 2008 |
Observations of Al2O3 and free silicon at the interface between aluminum films and SiO2
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July 1978 |
Hydride vapor phase epitaxy of AlN: thermodynamic analysis of aluminum source and its application to growth
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December 2003 |