Bias current dependence of superconducting transition temperature in superconducting spin-valve nanowires

Jara, Alejandro A.; Moen, Evan; Valls, Oriol T.; Krivorotov, Ilya N.

doi:10.1103/physrevb.100.184512

Title: Bias current dependence of superconducting transition temperature in superconducting spin-valve nanowires

Journal Article · Mon Nov 25 00:00:00 EST 2019 · Physical Review B

DOI:https://doi.org/10.1103/physrevb.100.184512· OSTI ID:1802668

^[1]; Moen, Evan ^[2]; Valls, Oriol T. ^[2];

^[3]

Univ. of California, Irvine, CA (United States); Universidad Técnica Federico Santa María, Valparaíso (Chile)
Univ. of Minnesota, Minneapolis, MN (United States)
Univ. of California, Irvine, CA (United States)

Competition between superconducting and ferromagnetic ordering at interfaces between ferromagnets (F) and superconductors (S) gives rise to several proximity effects such as odd-triplet superconductivity and spin-polarized supercurrents. A prominent example of an S/F proximity effect is the spin switch effect (SSE) observed in S/F/N/F superconducting spin-valve multilayers, in which the superconducting transition temperature T_c is controlled by the angle $$\phi$$ between the magnetic moments of the F layers separated by a nonmagnetic metallic spacer N. Here we present an experimental study of SSE in Nb/Co/Cu/Co/CoO_x nanowires measured as a function of bias current flowing in the plane of the layers. In this work, these measurements reveal an unexpected dependence of T_c($$\phi$$) on the bias current: T_c(π)–T_c(0) changes sign with increasing current bias. We attribute the origin of this bias dependence of the SSE to a spin Hall current flowing perpendicular to the plane of the multilayer, which suppresses T_c of the multilayer. The bias dependence of SSE can be important for hybrid F/S devices such as those used in cryogenic memory for superconducting computers as device dimensions are scaled down to the nanometer length scale.

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Research Organization:: Univ. of California, Irvine, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: SC0014467

OSTI ID:: 1802668

Journal Information:: Physical Review B, Vol. 100, Issue 18; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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