Resistance drift in Ge2Sb2Te5 phase change memory line cells at low temperatures and its response to photoexcitation
- Univ. of Connecticut, Storrs, CT (United States)
- Univ. of Connecticut, Storrs, CT (United States); Eskisehir Osmangazi University (Turkey)
Resistance drift in amorphous Ge2Sb2Te5 is experimentally characterized in melt-quenched line cells in the range of 300 K to 125 K and is observed to follow the previously reported power-law behavior with drift coefficients in the range of 0.07 to 0.11 in the dark, linearly decreasing with 1/kT. While these drift coefficients measured in the dark are similar to commonly observed drift coefficients (~0.1) at and above room temperature, measurements under light show a significantly lower drift coefficient (0.05 under illumination vs 0.09 in the dark at 150 K). Periodic on/off switching of light shows a sudden decrease/increase in resistance, attributed to photo-excited carriers, followed by a very slow response (~30 min at 150 K) attributed to contribution of electron traps and slow trap-to-trap charge exchanges. A device-level electronic model is used to relate these experimental findings to gradual charging of electron traps in amorphous Ge2Sb2Te5, which gives rise to growth of a potential barrier for holes in time and, hence, resistance drift.
- Research Organization:
- Univ. of Connecticut, Storrs, CT (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- Grant/Contract Number:
- SC0005038
- OSTI ID:
- 1801648
- Journal Information:
- Applied Physics Letters, Vol. 116, Issue 25; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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