Two-dimensional analysis and design considerations of high-voltage planar junctions equipped with field plate and guard ring
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June 1991 |
5.0 kV breakdown-voltage vertical GaN p–n junction diodes
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February 2018 |
Simulation study of HEMT structures with HfO 2 cap layer for mitigating inverse piezoelectric effect related device failures
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January 2015 |
Power Performance of AlGaN–GaN HEMTs Grown on SiC by Plasma-Assisted MBE
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May 2004 |
High Voltage Vertical GaN p-n Diodes With Hydrogen-Plasma Based Guard Rings
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January 2020 |
Double surface effect causes a peak in band-edge photocurrent spectra: a quantitative model
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August 2016 |
Fabrication and characterization of metal–semiconductor–metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE
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September 2000 |
The 2018 GaN power electronics roadmap
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March 2018 |
Wannier Exciton in an Electric Field. I. Optical Absorption by Bound and Continuum States
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November 1970 |
Reliability issues of GaN based high voltage power devices
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September 2011 |
A review of junction field effect transistors for high-temperature and high-power electronics
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December 1998 |
High-breakdown-voltage pn-junction diodes on GaN substrates
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January 2007 |
Electric-Field Effects on Optical Absorption near Thresholds in Solids
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July 1966 |
Piezoelectric Franz–Keldysh effect in strained GaInN/GaN heterostructures
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April 1999 |
Zn acceptor position in GaN:Zn probed by contactless electroreflectance spectroscopy
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July 2018 |
Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor
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February 2016 |
Electric field effects on excitons in gallium nitride
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September 1996 |
Unstable behaviour of normally-off GaN E-HEMT under short-circuit
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March 2018 |
Binding energy for the intrinsic excitons in wurtzite GaN
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December 1996 |
Theoretical study of characteristics in GaN metal–semiconductor–metal photodetectors
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October 2003 |
Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors
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June 2003 |
Stark effect of one-dimensional Wannier excitons in polydiacetylene single crystals
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June 1992 |
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
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June 2008 |
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
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November 1997 |
Design of edge termination for GaN power Schottky diodes
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April 2005 |
Sub-bandgap absorption of gallium nitride determined by Photothermal Deflection Spectroscopy
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February 1996 |
Wannier Exciton in an Electric Field. II. Electroabsorption in Direct-Band-Gap Solids
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February 1971 |
Franz-Keldysh effect in semiconductor built-in fields: Doping concentration and space charge region characterization
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August 2018 |
Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence
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January 2005 |
Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage
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June 2018 |
Reflectance and emission spectra of excitonic polaritons in GaN
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August 1999 |
Design and simulation of a doping-less charge plasma based enhancement mode GaN MOSFET
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October 2017 |
Franz–Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage
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August 2016 |
Liquid crystal electrography: Electric field mapping and detection of peak electric field strength in AlGaN/GaN high electron mobility transistors
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May 2014 |
An analysis of temperature dependent piezoelectric Franz–Keldysh effect in AlGaN
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February 2000 |
Temperature-dependent absorption measurements of excitons in GaN epilayers
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October 1997 |
Contactless electroreflectance studies of the Fermi level position at the air/GaN interface: Bistable nature of the Ga-polar surface
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February 2017 |
Absorption spectra of GaN: film characterization by Urbach spectral tail and the effect of electric field
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September 2001 |
Stability and Reliability of Lateral GaN Power Field-Effect Transistors
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November 2019 |
Electroabsorption in Semiconductors: The Excitonic Absorption Edge
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April 1970 |
Schottky metal-semiconductor-metal photodetectors on GaN films grown on sapphire by molecular beam epitaxy
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November 2000 |
THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN
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November 1969 |
Electric field effects on excitons in gallium nitride
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January 1997 |
Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method
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June 1997 |
Influence of the Electron-Phonon Coupling on Energy States of Wannier Excitons
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February 1974 |
Free electron distribution in AlGaN/GaN heterojunction field-effect transistors
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March 2002 |
Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination
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September 2019 |
Franz−Keldysh Effect in GaN Nanowires
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July 2007 |