High broadband photoconductivity of few-layered MoS2 field-effect transistors measured using multi-terminal methods: effects of contact resistance

Das, Priyanka; Nash, Jawnaye; Webb, Micah; Burns, Raelyn; Mapara, Varun N.; Ghimire, Govinda; Rosenmann, Daniel; Divan, Ralu; Karaiskaj, Denis; McGill, Stephen A.; Sumant, Anirudha V.; Dai, Qilin; Ray, Paresh C.; Tawade, Bhausaheb; Raghavan, Dharmaraj; Karim, Alamgir; Pradhan, Nihar R.

doi:10.1039/d0nr07311c

Title: High broadband photoconductivity of few-layered MoS₂ field-effect transistors measured using multi-terminal methods: effects of contact resistance

Journal Article · Fri Oct 23 00:00:00 EDT 2020 · Nanoscale

DOI:https://doi.org/10.1039/d0nr07311c· OSTI ID:1798187

Das, Priyanka ^[1]; Nash, Jawnaye ^[1]; Webb, Micah ^[1]; Burns, Raelyn ^[1]; Mapara, Varun N. ^[2]; Ghimire, Govinda ^[1]; Rosenmann, Daniel ^[3]; Divan, Ralu ^[3]; Karaiskaj, Denis ^[2]; McGill, Stephen A. ^[4];

^[3];

^[1];

^[5]; Raghavan, Dharmaraj ^[5];

^[6];

^[7]

Jackson State Univ., Jackson, MS (United States). Layered Materials and Device Physics Lab.
Univ. of South Florida, Tampa, FL (United States)
Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
Howard Univ., Washington, DC (United States)
Univ. of Houston, TX (United States)
Jackson State Univ., Jackson, MS (United States). Layered Materials and Device Physics Lab.; Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)

Among the layered two dimensional semiconductors, molybdenum disulfide (MoS₂) is considered to be an excellent candidate for applications in optoelectronics and integrated circuits due to its layer-dependent tunable bandgap in the visible region, high ON/OFF current ratio in field-effect transistors (FET) and strong light–matter interaction properties. In this study, using multi-terminal measurements, we report high broadband photocurrent response (R) and external quantum efficiency (EQE) of few-atomic layered MoS₂ phototransistors fabricated on a SiO₂ dielectric substrate and encapsulated with a thin transparent polymer film of Cytop. The photocurrent response was measured using a white light source as well as a monochromatic light of wavelength λ = 400 nm–900 nm. We measured responsivity using a 2-terminal configuration as high as R = 1 × 10³ A W^-1 under white light illumination with an optical power P_opt = 0.02 nW. The R value increased to 3.5 × 10³ A W^-1 when measured using a 4-terminal configuration. Using monochromatic light on the same device, the measured values of R were 10³ and 6 × 10³ A W^-1 under illumination of λ = 400 nm when measured using 2- and 4-terminal methods, respectively. The highest EQE values obtained using λ = 400 nm were 10⁵% and 10⁶% measured using 2- and 4-terminal configurations, respectively. The wavelength dependent responsivity decreased from 400 nm to the near-IR region at 900 nm. The observed photoresponse, photocurrent–dark current ratio (PDCR), detectivity as a function of applied gate voltage, optical power, contact resistances and wavelength were measured and are discussed in detail. The observed responsivity is also thoroughly studied as a function of contact resistance of the device.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; National Science Foundation (NSF)

Grant/Contract Number:: AC02-06CH11357; DMR-1826886; DMR-1900692; DMR-1644779

OSTI ID:: 1798187

Alternate ID(s):: OSTI ID: 1712818

Journal Information:: Nanoscale, Vol. 12, Issue 45; ISSN 2040-3364

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
phototransistors
molybdenum disulfide
responsivity
quantum efficiency
detectivity

Title: High broadband photoconductivity of few-layered MoS2 field-effect transistors measured using multi-terminal methods: effects of contact resistance

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Title: High broadband photoconductivity of few-layered MoS₂ field-effect transistors measured using multi-terminal methods: effects of contact resistance