Strain mapping at nanometer resolution using advanced nano-beam electron diffraction

Ozdol, V. B.; Gammer, C.; Jin, X. G.; Ercius, P.; Ophus, C.; Ciston, J.; Minor, A. M.

doi:10.1063/1.4922994

Title: Strain mapping at nanometer resolution using advanced nano-beam electron diffraction

Journal Article · Wed Jun 24 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4922994· OSTI ID:1773706

Ozdol, V. B. ^[1]; Gammer, C. ^[2]; Jin, X. G. ^[3]; Ercius, P. ^[1]; Ophus, C. ^[1]; Ciston, J. ^[1]; Minor, A. M. ^[4]

Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Center for Electron Microscopy
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Center for Electron Microscopy; Univ. of California, Berkeley, CA (United States); Univ. of Vienna (Austria)
Nagoya Univ. (Japan). Inst. for Advanced Research
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Center for Electron Microscopy; Univ. of California, Berkeley, CA (United States)

In this work, we report on the development of a nanometer scale strain mapping technique by means of scanning nano-beam electron diffraction. Only recently possible due to fast acquisition with a direct electron detector, this technique allows for strain mapping with a high precision of 0.1% at a lateral resolution of 1 nm for a large field of view reaching up to 1 μm. We demonstrate its application to a technologically relevant strain-engineered GaAs/GaAsP hetero-structure and show that the method can even be applied to highly defected regions with substantial changes in local crystal orientation. Strain maps derived from atomically resolved scanning transmission electron microscopy images were used to validate the accuracy, precision and resolution of this versatile technique.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES), Scientific User Facilities Division; USDOE

Grant/Contract Number:: AC02-05CH11231; FWF J3397

OSTI ID:: 1773706

Alternate ID(s):: OSTI ID: 1226763

Journal Information:: Applied Physics Letters, Vol. 106, Issue 25; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 129 works

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