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Title: Accessing Atomic-scale Phosphorus Dopant Distribution in Precise Silicon Devices by Advanced STEM Imaging and Spectroscopy

Journal Article · · Microscopy and Microanalysis
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  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
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The structural and chemical characterization at the atomic-scale plays a critical role in understanding the structure-property relationship in precise electrical devices such as those produced by atomic-precision advanced manufacturing (APAM). APAM, utilizing hydrogen lithography in a scanning tunneling microscope, offers a potential pathway to ultra-efficient transistors, and has been developed to produce phosphorus (P)-based donor devices integrated into bare Si substrates. Structural characterization of the buried, Si with P dopant (Si:P) delta-layer in the devices by scanning transmission electron microscopy (STEM), however, is a challenge due to similar atomic number and low concentration of the P dopants. In this paper, we describe several efforts of utilizing advanced STEM imagining and spectroscopic techniques to quantify the Si:P deltalayers. STEM imaging combining low-angle and high-angle annular dark-field (LAADF, HAADF) detectors as well as atomic-scale elemental mapping using energy-dispersive X-ray spectroscopy (EDS) are used to reveal the P and defect distribution across the delta-layer processed under various thermal conditions.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC04-94AL85000; NA0003525
OSTI ID:
1670186
Report Number(s):
SAND-2020-6485J; 686900
Journal Information:
Microscopy and Microanalysis, Vol. 26, Issue S2; ISSN 1431-9276
Publisher:
Microscopy Society of America (MSA)Copyright Statement
Country of Publication:
United States
Language:
English

References (4)

Chemical Quantification of Atomic-Scale EDS Maps under Thin Specimen Conditions journal October 2014
Atomic-scale Chemical Imaging and Quantification of Metallic Alloy Structures by Energy-Dispersive X-ray Spectroscopy journal February 2014
All-optical lithography process for contacting nanometer precision donor devices journal November 2017
Atomic-resolution defect contrast in low angle annular dark-field STEM journal May 2012

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