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Title: The Effect of Defects on the Shock Hugoniot of Tantalum

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.5096526· OSTI ID:1657126

Using molecular dynamics simulations, we investigate the effect of vacancies and dislocations on the dynamic response of single crystal tantalum to shock loading along the $$\langle$$110$$\rangle$$ axis. A Hugoniostat technique is employed, for which a series of states along the Hugoniot are sampled by many individual simulations. We show that defects have a limited effect on the shock/particle velocity relationship and that the shock pressure/volume relationship can be well predicted by taking into account the changes in the initial density and sound speeds of the samples. The principal effect of initial defects is the activation of heterogeneous dislocation nucleation and expedited dislocation multiplication during shock. The heat generated by plastic work, caused by defects moving through the lattice, is substantial. The result is significantly divergent final shock temperatures for different initial defect concentrations and pronounced changes in the resultant shock melting temperatures. The motion of dislocations also leaves behind a noninconsequential concentration of vacancies that is quantified.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
USDOE Laboratory Directed Research and Development (LDRD) Program
Grant/Contract Number:
89233218CNA000001; LDRD-2017033DR
OSTI ID:
1657126
Alternate ID(s):
OSTI ID: 1525509
Report Number(s):
LA-UR-19-22111; TRN: US2203803
Journal Information:
Journal of Applied Physics, Vol. 125, Issue 21; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 22 works
Citation information provided by
Web of Science

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