Heteroepitaxial growth and surface structure of L10-MnGa(111) ultra-thin films on GaN(0001)
- Ohio Univ., Athens, OH (United States). Nanoscale and Quantum Phenomena Inst.
- Ohio Univ., Athens, OH (United States). Nanoscale and Quantum Phenomena Inst.; Meritorious Autonomous Univ. of Puebla (Mexico)
- Ohio Univ., Athens, OH (United States). Nanoscale and Quantum Phenomena Inst.; Seagate Technology, Fremont, CA (United States)
- Ohio Univ., Athens, OH (United States). Nanoscale and Quantum Phenomena Inst.; King Fahd Univ. of Petroleum and Minerals, Dhahran (Saudi Arabia)
- Ohio Univ., Athens, OH (United States). Nanoscale and Quantum Phenomena Inst.; National Autonomous Univ. of Mexico (Mexico)
L10-structured MnGa(111) ultra-thin films were heteroepitaxially grown on GaN(0001) under lightly Mn-rich conditions using molecular beam epitaxy. Room-temperature scanning tunneling microscopy (STM) investigations reveal smooth terraces and angular step edges, with the surface structure consisting primarily of a 2x2 reconstruction along with small patches of 1x2. Theoretical calculations were undertaken using density functional theory, and the simulated STM images were calculated using the Tersoff-Hamann approximation, demonstrating that a stoichiometric 1x2 and a Mn-rich 2x2 surface structure give the best agreement with the observed experimental images.
- Research Organization:
- Ohio Univ., Athens, OH (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- Contributing Organization:
- Ohio Supercomputer Center
- Grant/Contract Number:
- FG02-06ER46317
- OSTI ID:
- 1633194
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 16; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 15 works
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