Voltage control of unidirectional anisotropy in ferromagnet-multiferroic system

Manipatruni, Sasikanth; Nikonov, Dmitri E.; Lin, Chia-Ching; Prasad, Bhagwati; Huang, Yen-Lin; Damodaran, Anoop R.; Chen, Zuhuang; Ramesh, Ramamoorthy; Young, Ian A.

doi:10.1126/sciadv.aat4229

Title: Voltage control of unidirectional anisotropy in ferromagnet-multiferroic system

Journal Article · Fri Nov 23 00:00:00 EST 2018 · Science Advances

DOI:https://doi.org/10.1126/sciadv.aat4229· OSTI ID:1625995

^[1];

^[1]; Lin, Chia-Ching ^[1]; Prasad, Bhagwati ^[2]; Huang, Yen-Lin ^[2]; Damodaran, Anoop R. ^[2];

^[2]; Ramesh, Ramamoorthy ^[2]; Young, Ian A. ^[1]

Intel Corp., Hillsboro, OR (United States). Components Research
Univ. of California, Berkeley, CA (United States). Dept. of Physics. Materials Science and Engineering

Demonstration of ultralow energy switching mechanisms is imperative for continued improvements in computing devices. Ferroelectric (FE) and multiferroic (MF) order and their manipulation promise an ideal combination of state variables to reach attojoule range for logic and memory (i.e., ~30× lower switching energy than nanoelectronics). In BiFeO₃(BFO), the coupling between the antiferromagnetic (AFM) and FE order is robust at room temperature, scalable in voltage, stabilized by the FE order, and can be integrated into a fabrication process for a beyond-CMOS (complementary metal-oxide semiconductor) era. The presence of the AFM order and a canted magnetic moment in this system causes exchange interaction with a ferromagnet such as Co_0.9Fe_0.1or La_0.7Sr_0.3MnO₃. Previous research has shown that exchange coupling (uniaxial anisotropy) can be controlled with an electric field. However, voltage modulation of unidirectional anisotropy, which is preferred for logic and memory technologies, has not yet been demonstrated. Here, we present evidence for electric field control of exchange bias of laterally scaled spin valves that is exchange coupled to BFO at room temperature. We show that the exchange bias in this bilayer is robust, electrically controlled, and reversible. We anticipate that magnetoelectricity at these scaled dimensions provides a powerful pathway for computing beyond modern nanoelectronics by enabling a new class of nonvolatile, ultralow energy computing elements.

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Research Organization:: Univ. of California, Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: SC0014664

OSTI ID:: 1625995

Journal Information:: Science Advances, Vol. 4, Issue 11; ISSN 2375-2548

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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Design and Manipulation of Ferroic Domains in Complex Oxide Heterostructures Strkalj, Nives; Gradauskaite, Elzbieta; Nordlander, Johanna ETH Zurich https://doi.org/10.3929/ethz-b-000369931	text	January 2019
Nonvolatile Electric Control of Exchange Bias by a Redox Transformation of the Ferromagnetic Layer Zehner, Jonas; Huhnstock, Rico; Oswald, Steffen Advanced Electronic Materials, Vol. 5, Issue 6 https://doi.org/10.1002/aelm.201900296	journal	May 2019
Electric control of exchange bias in Co/FeO _x bilayer by resistive switching Wei, Lujun; Qu, Jiangtao; Zheng, Rongkun AIP Advances, Vol. 10, Issue 1 https://doi.org/10.1063/1.5129506	journal	January 2020
Acidic aqueous solution switching of magnetism in BiFeO ₃ /La _1 − x Sr _x MnO ₃ heterostructures Ma, Ji; Tian, Yu; Chen, Mingfeng Journal of Applied Physics, Vol. 126, Issue 7 https://doi.org/10.1063/1.5108842	journal	August 2019
Opportunities and challenges for magnetoelectric devices Hu, Jia-Mian; Nan, Ce-Wen APL Materials, Vol. 7, Issue 8 https://doi.org/10.1063/1.5112089	journal	August 2019
Design and Manipulation of Ferroic Domains in Complex Oxide Heterostructures Strkalj, Nives; Gradauskaite, Elzbieta; Nordlander, Johanna Materials, Vol. 12, Issue 19 https://doi.org/10.3390/ma12193108	journal	September 2019
Manipulating magnetoelectric energy landscape in multiferroics Huang, Yen-Lin; Nikonov, Dmitri; Addiego, Christopher Nature Communications, Vol. 11, Issue 1 https://doi.org/10.1038/s41467-020-16727-2	journal	June 2020

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