Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers

Apreutesei, Mihai; Debord, Régis; Bouras, Mohamed; Regreny, Philippe; Botella, Claude; Benamrouche, Aziz; Carretero-Genevrier, Adrian; Gazquez, Jaume; Grenet, Geneviève; Pailhès, Stéphane; Saint-Girons, Guillaume; Bachelet, Romain

doi:10.1080/14686996.2017.1336055

Title: Thermoelectric La-doped SrTiO₃ epitaxial layers with single-crystal quality: from nano to micrometers

Journal Article · Tue Jan 10 00:00:00 EST 2017 · Science and Technology of Advanced Materials

DOI:https://doi.org/10.1080/14686996.2017.1336055· OSTI ID:1625096

Apreutesei, Mihai ^[1]; Debord, Régis ^[2]; Bouras, Mohamed ^[1]; Regreny, Philippe ^[1]; Botella, Claude ^[1]; Benamrouche, Aziz ^[1]; Carretero-Genevrier, Adrian ^[3]; Gazquez, Jaume ^[4]; Grenet, Geneviève ^[1]; Pailhès, Stéphane ^[2]; Saint-Girons, Guillaume ^[1];

^[1]

Inst. des Nanotechnologies de Lyon (INL) – CNRS, Ecully (France)
Inst. Lumière Matière (ILM) - CNRS, Villeurbanne (France)
Inst. des Nanotechnologies de Lyon (INL) – CNRS, Ecully (France); Inst. d’Electronique et des Systèmes (IES) - CNRS, Montpellier (France)
Inst. de Ciencia de Materials de Barcelona (ICMAB -CSIC), Bellaterra (Spain)

High-quality thermoelectric La_0.2Sr_0.8TiO₃ (LSTO) films, with thicknesses ranging from 20 nm to 0.7 μm, have been epitaxially grown on SrTiO₃(001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 × 10^-4 Ω cm at room temperature), one order of magnitude lower than standard commercial Nb-doped SrTiO3 singlecrystalline substrate. The conservation of transport properties within this thickness range has been confirmed by thermoelectric measurements where Seebeck coefficients of approximately –60 μV/K have been recorded for all films. These LSTO films can be integrated on Si for nonvolatile memory structures or opto-microelectronic devices, functioning as transparent conductors or thermoelectric elements.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1625096

Journal Information:: Science and Technology of Advanced Materials, Vol. 18, Issue 1; ISSN 1468-6996

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
Materials Science
Functional oxides
Thermoelectricity
Molecular beam epitaxy
La-doped SrTiO3
Integrated films

Thermoelectric La-doped SrTiO₃ epitaxial layers with single-crystal quality: from nano to micrometers Apreutesei, Mihai; Debord, Régis; Bouras, Mohamed https://doi.org/10.6084/m9.figshare.5129431 The current record is supplemented by this text	text	January 2017
Thermoelectric La-doped SrTiO₃ epitaxial layers with single-crystal quality: from nano to micrometers Apreutesei, Mihai; Debord, Régis; Bouras, Mohamed https://doi.org/10.6084/m9.figshare.5129431.v1 The current record is supplemented by this text	text	January 2017

Title: Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers

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