GaN/InGaN Blue Light-Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam-Assisted Deposition
- Univ. of New Mexico, Albuquerque, NM (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- iBeam Materials, Santa Fe, NM (United States)
Light-emitting diode (LED) arrays fabricated on a polycrystalline metal substrate are demonstrated using a novel technique that enables the growth of epitaxial metal-organic chemical vapor deposition (MOCVD) GaN layers on non-single-crystal substrates. Epitaxial GaN is deposited directly on metal foil using an intermediate ion beam-assisted deposition (IBAD) aligned layer. For a single 170 μm-diameter LED on the metal foil, electroluminescence (EL) spectrum shows a peak wavelength of ≈452 nm and a full width at half maximum (FWHM) of ≈24 nm. The current–voltage (I –V ) characteristics show a turn-on voltage of 3.7 V, a series resistance of 10 Ω. LEDs on metal show a relative external quantum efficiency (EQE) that is roughly 3× lower than that of similar LEDs fabricated on a sapphire substrate. Finally, InGaN LEDs on large-area non-single-crystal substrates such as metal foils enable large-area manufacturing, reducing production cost, and opening the door for new applications in lighting and displays.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- Grant/Contract Number:
- AC04-94AL85000; AR0000447; 89233218CNA000001; NA0003525
- OSTI ID:
- 1618075
- Alternate ID(s):
- OSTI ID: 1596390
- Report Number(s):
- SAND-2020-0090J; 681940
- Journal Information:
- Physica Status Solidi. A, Applications and Materials Science, Vol. 217, Issue 7; ISSN 1862-6300
- Publisher:
- WileyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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