Measurement of shunt resistance and conduction band offset in Cu(In,Ga)Se2 solar cells through joint analysis of temperature and intensity dependence of open-circuit voltage and photoluminescence

Swartz, Craig H.; Paul, Sanjoy; Mansfield, Lorelle; Li, Jian V.; Holtz, Mark

doi:10.35848/1347-4065/ab89f8

Title: Measurement of shunt resistance and conduction band offset in Cu(In,Ga)Se₂ solar cells through joint analysis of temperature and intensity dependence of open-circuit voltage and photoluminescence

Journal Article · Thu Apr 16 00:00:00 EDT 2020 · Japanese Journal of Applied Physics

DOI:https://doi.org/10.35848/1347-4065/ab89f8· OSTI ID:1615907

^[1];

^[1]; Mansfield, Lorelle ^[2]; Li, Jian V. ^[3]; Holtz, Mark ^[1]

Texas State Univ., San Marcos, TX (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)
National Cheng Kung Univ., Tainan (Taiwan)

Joint analysis studies of open-circuit voltage and photoluminescence intensity (PL-I) are reported for CuIn1-x Ga x Se2 (CIGSe) solar cells. A range of compositions are investigated, including constant x = 0.35 and x = 0.55 as well as a graded composition profile having a minimum of x = 0.25. Both the open-circuit voltage and PL-I are measured as functions of temperature and illumination intensity. With these two measurements, a full model-based fitting of the temperature and illumination dependence allows extraction of the effects of window layer band offset and shunt resistance, in addition to bulk and interface recombination parameters. To quantitatively analyze the two distinct measurements jointly, the absolute PL-I is measured to obtain quasi-Fermi-level splitting.

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Research Organization:: Texas State Univ., San Marcos, TX (United States); National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; Ministry of Science and Technology, Taiwan

Grant/Contract Number:: EE0007541; AC36-08GO28308

OSTI ID:: 1615907

Alternate ID(s):: OSTI ID: 1659904

Report Number(s):: NREL/JA-5K00-76618

Journal Information:: Japanese Journal of Applied Physics, Vol. 59, Issue 5; ISSN 0021-4922

Publisher:: Japan Society of Applied PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Measurement of shunt resistance and conduction band offset in Cu(In,Ga)Se2 solar cells through joint analysis of temperature and intensity dependence of open-circuit voltage and photoluminescence

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Title: Measurement of shunt resistance and conduction band offset in Cu(In,Ga)Se₂ solar cells through joint analysis of temperature and intensity dependence of open-circuit voltage and photoluminescence