From first-principles defect chemistry to device damage models of radiation effects in III-V semiconductors.
Conference
·
OSTI ID:1593578
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1593578
- Report Number(s):
- SAND2018-11832C; 669257
- Resource Relation:
- Conference: Proposed for presentation at the The 9th International Conference on Multiscale Materials Modeling (MMM-2018) held October 28 - November 2, 2018 in Osaka, Osaka Prefecture, Japan.
- Country of Publication:
- United States
- Language:
- English
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