Lower-bound dislocation density mapping in microcoined tantalum using high-resolution electron backscatter diffraction
- General Atomics, San Diego, CA (United States)
- Brigham Young Univ., Provo, UT (United States)
High-resolution electron backscatter diffraction (HR-EBSD) is used to map the geometrically necessary dislocation (GND) density in the cross-sections of annealed, rolled, and microcoined tantalum foils that are typical targets used in modern laser-induced compression materials science studies. The microcoined samples are characteristic of microforming, where the deformation length scale is on the order of the grain size (~50 μm). Specifically, inhomogeneities in dislocation density maps across 0.1–1mm regions of interest are compared with expectations from slip line field approximations. Here, the average HR-EBSD GND dislocation density measurements in various annealed and cold worked tantalum samples are compared with corresponding dislocation density approximations from microhardness measurements. GND densities in the range 1013 - 1015 m-2 are typical.
- Research Organization:
- General Atomics, San Diego, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Fusion Energy Sciences (FES)
- Grant/Contract Number:
- FC02-04ER54698; SC0012587
- OSTI ID:
- 1561216
- Alternate ID(s):
- OSTI ID: 1702920
- Journal Information:
- Materials Characterization, Vol. 153, Issue C; ISSN 1044-5803
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
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