Analysis of the ZnTe:Cu Contact on CdS/CdTe Solar Cells: Preprint
We report on the recent use of cathodoluminescence (CL) to probe the depth-dependent changes in radiative recombination that occur in CdTe devices during ZnTe:Cu contacting procedures. These types of CL measurements may be useful to assist in linking impurity diffusion (e.g., Cu) from the contact with depth-dependent variation in electrical activation within the CdTe layer. Variable-energy CL suggests that diffusion from the ZnTe:Cu contact interface may assist in reducing donors levels in the CdTe bulk, and thereby yield p-type material in the region near the contact. CL analysis near abrupt metal discontinuities provides estimates of diffusion lengths for carriers associated with both excitonic and donor-to-acceptor pair recombination. Finally, CL measurements at increasing excitation levels (i.e., increasing electron-beam current) provides estimates of the defect state density, as well as providing evidence that discrete multiple defect bands may exist in CdTe prior to contacting.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC36-99-GO10337
- OSTI ID:
- 15004689
- Report Number(s):
- NREL/CP-520-33940; TRN: US200320%%379
- Resource Relation:
- Journal Volume: 763; Conference: Prepared for the 2003 Materials Research Society Spring Meeting, San Francisco, CA (US), 04/21/2003--04/25/2003; Other Information: PBD: 1 Apr 2003
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
CATHODOLUMINESCENCE
DEFECTS
DIFFUSION
DIFFUSION LENGTH
EXCITATION
PROBES
RECOMBINATION
SOLAR CELLS
PV
CATHODOLUMINESCENCE (CL)
CDTE
ZNTE: CU CONTACT
ELECTRON-BEAM CURRENT
DEPTH-DEPENDENT
CLOSE-SPACE SUBLIMATION
SECONDARY-ION MASS SPECTROSCOPY (SIMS)
SOLAR ENERGY - PHOTOVOLTAICS