Magnetoelectric memory cells with domain-wall-mediated switching
Patent
·
OSTI ID:1489788
A magnetoelectric memory cell with domain-wall-mediated switching is implemented using a split gate architecture. The split gate architecture allows a domain wall to be trapped within a magnetoelectric antiferromagnetic (MEAF) active layer. An extension of this architecture applies to multiple-gate linear arrays that can offer advantages in memory density, programmability, and logic functionality. Applying a small anisotropic in-plane shear strain to the MEAF can block domain wall precession to improve reliability and speed of switching.
- Research Organization:
- Univ. of Nebraska, Lincoln, NE (United States); THE JOHN HOPKINS UNIVERSITY, Baltimore, MD (United States); INTEL CORPORATION, Santa Clara, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-08ER46544; SC0014189
- Assignee:
- BOARD OF REGENTS OF THE UNIVERSITY OF NEBRASKA (Lincoln, NE); THE JOHN HOPKINS UNIVERSITY (Baltimore, MD); INTEL CORPORATION (Santa Clara, CA)
- Patent Number(s):
- 10,090,034
- Application Number:
- 15/807,369
- OSTI ID:
- 1489788
- Resource Relation:
- Patent File Date: 2017 Nov 08
- Country of Publication:
- United States
- Language:
- English
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