Deterministic and robust room-temperature exchange coupling in monodomain multiferroic BiFeO3 heterostructures

Saenrang, W.; Davidson, B. A.; Maccherozzi, F.; Podkaminer, J. P.; Irwin, J.; Johnson, R. D.; Freeland, J. W.; Íñiguez, J.; Schad, J. L.; Reierson, K.; Frederick, J. C.; Vaz, C. A. F.; Howald, L.; Kim, T. H.; Ryu, S.; Veenendaal, M. v.; Radaelli, P. G.; Dhesi, S. S.; Rzchowski, M. S.; Eom, C. B.

doi:10.1038/s41467-017-01581-6

Title: Deterministic and robust room-temperature exchange coupling in monodomain multiferroic BiFeO₃ heterostructures

Journal Article · Fri Nov 17 00:00:00 EST 2017 · Nature Communications

DOI:https://doi.org/10.1038/s41467-017-01581-6· OSTI ID:1466373

Saenrang, W. ^[1]; Davidson, B. A. ^[2]; Maccherozzi, F. ^[3]; Podkaminer, J. P. ^[1];

^[1]; Johnson, R. D. ^[4]; Freeland, J. W. ^[5]; Íñiguez, J. ^[6]; Schad, J. L. ^[1]; Reierson, K. ^[1]; Frederick, J. C. ^[1];

^[7]; Howald, L. ^[7]; Kim, T. H. ^[1]; Ryu, S. ^[1]; Veenendaal, M. v. ^[8]; Radaelli, P. G. ^[9]; Dhesi, S. S. ^[3]; Rzchowski, M. S. ^[1]; Eom, C. B. ^[1]

Univ. of Wisconsin, Madison, WI (United States)
Univ. of Wisconsin, Madison, WI (United States); TASC National Lab., Trieste (Italy); Temple Univ., Philadelphia, PA (United States)
Science and Technology Facilities Council (STFC), Harwell Campus, Oxford (United Kingdom). Diamond Light Source, Ltd.
Univ. of Oxford, Oxford (United Kingdom); Rutherford Appleton Lab., Didcot (United Kingdom)
Argonne National Lab. (ANL), Argonne, IL (United States)
Luxembourg Institute of Science and Technology, Alzette (Luxembourg)
Paul Scherrer Inst. (PSI), Villigen (Switzerland)
Argonne National Lab. (ANL), Argonne, IL (United States); Northern Illinois Univ., DeKalb, IL (United States)
Univ. of Oxford, Oxford (United Kingdom)

Exploiting multiferroic BiFeO₃ thin films in spintronic devices requires deterministic and robust control of both internal magnetoelectric coupling in BiFeO₃, as well as exchange coupling of its antiferromagnetic order to a ferromagnetic overlayer. Previous reports utilized approaches based on multi-step ferroelectric switching with multiple ferroelectric domains. Because domain walls can be responsible for fatigue, contain localized charges intrinsically or via defects, and present problems for device reproducibility and scaling, an alternative approach using a monodomain magnetoelectric state with single-step switching is desirable. Here we demonstrate room temperature, deterministic and robust, exchange coupling between monodomain BiFeO₃ films and Co overlayer that is intrinsic (i.e., not dependent on domain walls). Direct coupling between BiFeO₃ antiferromagnetic order and Co magnetization is observed, with ~90° in-plane Co moment rotation upon single-step switching that is reproducible for hundreds of cycles. Finally, this has important consequences for practical, low power non-volatile magnetoelectric devices utilizing BiFeO₃.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: US Army Research Office (ARO); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1466373

Journal Information:: Nature Communications, Vol. 8, Issue 1; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 39 works

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Shear-strain-mediated magnetoelectric effects revealed by imaging Ghidini, M.; Mansell, R.; Maccherozzi, F. Nature Materials, Vol. 18, Issue 8 https://doi.org/10.1038/s41563-019-0374-8	journal	May 2019
Spin-coupling-induced Improper Polarizations and Latent Magnetization in Multiferroic BiFeO3 Jang, Hyun Myung; Han, Hyeon; Lee, Jung-Hoon Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-017-18636-9	journal	January 2018
Influence of flexoelectricity on the spin cycloid in (110)-oriented $BiFe O_{3}$ films Sando, D.; Appert, F.; Burns, S. R. Physical Review Materials, Vol. 3, Issue 10 https://doi.org/10.1103/physrevmaterials.3.104404	journal	October 2019
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