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Title: First-principles study on the electronic, optical, and transport properties of monolayer α- and β-GeSe

Journal Article · · Physical Review B
 [1];  [2];  [3];  [1];  [1];  [1];  [1];  [1];  [4];  [1];  [5]
  1. Fudan Univ., Shanghai (China)
  2. Fudan Univ., Shanghai (China); Nanjing Univ., Nanjing (China); Ames Lab. and Iowa State Univ., Ames, IA (United States)
  3. Chinese Academy of Sciences, Ningbo (China)
  4. Nanjing Univ., Nanjing (China)
  5. Ames Lab. and Iowa State Univ., Ames, IA (United States); Institute of Electronic Structure and Laser, Crete (Greece)

The extraordinary properties and the novel applications of black phosphorene induce the research interest in the monolayer group-IV monochalcogenides. Here using first-principles calculations, we systematically investigate the electronic, transport, and optical properties of monolayer α- and β-GeSe, revealing a direct band gap of 1.61 eV for monolayer α-GeSe and an indirect band gap of 2.47 eV for monolayer β-GeSe. For monolayer β-GeSe, the electronic/hole transport is anisotropic, with an extremely high electron mobility of 2.93×104cm2/Vs along the armchair direction, comparable to that of black phosphorene. However, for β-GeSe, robust band gaps nearly independent of the applied tensile strain along the armchair direction are observed. Both monolayer α- and β-GeSe exhibit anisotropic optical absorption in the visible spectrum.

Research Organization:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
11374063; 11404348; AC02-07CH11358; 320081 (PHOTOMETA)
OSTI ID:
1434322
Alternate ID(s):
OSTI ID: 1414620
Report Number(s):
IS-J-9546; PRBMDO; TRN: US1802819
Journal Information:
Physical Review B, Vol. 96, Issue 24; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 73 works
Citation information provided by
Web of Science

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Cited By (13)

Saddle-Point Excitons and Their Extraordinary Light Absorption in 2D β-Phase Group-IV Monochalcogenides journal October 2018
Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity journal June 2018
A quantum kinetic approach for calculating low-field mobility in black phosphorus crystals and multilayer phosphorene journal October 2018
The role of Anderson’s rule in determining electronic, optical and transport properties of transition metal dichalcogenide heterostructures journal January 2018
Design and characterization of novel polymorphs of single-layered tin-sulfide for direction-dependent thermoelectric applications using first-principles approaches journal January 2019
Novel two-dimensional semiconductor SnP 3 : high stability, tunable bandgaps and high carrier mobility explored using first-principles calculations journal January 2018
Electronic structures and transport properties of SnS–SnSe nanoribbon lateral heterostructures journal January 2019
Strain-engineering the in-plane electrical anisotropy of GeSe monolayers journal January 2020
A two-dimensional GeSe/SnSe heterostructure for high performance thin-film solar cells journal January 2019
Emerging black phosphorus analogue nanomaterials for high-performance device applications journal January 2020
Two-dimensional n -InSe/ p -GeSe(SnS) van der Waals heterojunctions: High carrier mobility and broadband performance journal March 2018
Tunable ferroelectricity and anisotropic electric transport in monolayer β -GeSe journal April 2018
First-Principles Calculations of Angular and Strain Dependence on Effective Masses of Two-Dimensional Phosphorene Analogues (Monolayer α-Phase Group-IV Monochalcogenides MX) journal February 2019

Figures / Tables (10)


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