Ferroelectric Domain Studies of Patterned (001) BiFeO3 by Angle-Resolved Piezoresponse Force Microscopy
- Korea Advanced Inst. Science and Technology (KAIST), Daejeon (Korea, Republic of). Dept. of Materials Science and Engineering; Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Northwestern Univ., Evanston, IL (United States)
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Univ. of Puerto Rico, San Juan, PR (United States). Dept. of Physics and Inst. for Functional Nanomaterials
- Univ. of Puerto Rico, San Juan, PR (United States). Dept. of Physics and Inst. for Functional Nanomaterials
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Northwestern Univ., Evanston, IL (United States). Materials Science and Engineering Dept.
- Korea Advanced Inst. Science and Technology (KAIST), Daejeon (Korea, Republic of). Dept. of Materials Science and Engineering
We have studied the ferroelectric domains in (001) BiFeO3 (BFO) films patterned into mesas with various aspect ratios, using angle-resolved piezoresponse force microscope (AR-PFM), which can image the in-plane polarization component with an angular resolution of 30 degrees. We observed not only stable polarization variants, but also meta-stable polarization variants, which can reduce the charge accumulated at domain boundaries. We considered the number of neighboring domains that are in contact, in order to analyze the complexity of the ferroelectric domain structure. Comparison of the ferroelectric domains from the patterned and unpatterned regions showed that the elastic relaxation induced by removal of the film surrounding the mesas led to a reduction of the average number of neighboring domains, indicative of a decrease in domain complexity. Finally, we also found that the rectangular BFO patterns with high aspect ratio had a simpler domain configuration and enhanced piezoelectric characteristics than square-shaped mesas. Manipulation of the ferroelectric domains by controlling the aspect ratio of the patterned BFO thin film mesas can be useful for nanoelectronic applications.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Research Foundation, Korea; National Science Foundation (NSF)
- Grant/Contract Number:
- AC02-06CH11357; 1002410
- OSTI ID:
- 1420078
- Journal Information:
- Scientific Reports, Vol. 8, Issue 1; ISSN 2045-2322
- Publisher:
- Nature Publishing GroupCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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