Nanoplasmonic Phenomena at Electronic Boundaries in Graphene

Fei, Zhe; Ni, Guang -Xin; Jiang, Bor -Yuan; Fogler, Michael M.; Basov, D. N.

doi:10.1021/acsphotonics.7b00477

Title: Nanoplasmonic Phenomena at Electronic Boundaries in Graphene

Journal Article · Fri Jun 30 00:00:00 EDT 2017 · ACS Photonics

DOI:https://doi.org/10.1021/acsphotonics.7b00477· OSTI ID:1417351

^[1]; Ni, Guang -Xin ^[2]; Jiang, Bor -Yuan ^[2]; Fogler, Michael M. ^[2]; Basov, D. N. ^[3]

Ames Lab. and Iowa State Univ., Ames, IA (United States)
Univ. of California, San Diego, La Jolla, CA (United States)
Univ. of California, San Diego, La Jolla, CA (United States); Columbia Univ., New York, NY (United States)

Here, we review recent discoveries of the intriguing plasmonic phenomena at a variety of electronic boundaries (EBs) in graphene including a line of charges in graphene induced by a carbon nanotube gate, grain boundaries in chemical vapor deposited graphene films, an interface between graphene and moiré patterned graphene, an interface between graphene and bilayer graphene, and others. All these and other EBs cause plasmonic impedance mismatch at the two sides of the boundaries. Manifestations of this effect include plasmonic fringes that stem from plasmon reflections and interference. Quantitative analysis and modeling of these plasmonic fringes uncovered intriguing properties and underlying physics of the EBs. Potential plasmonic applications associated with these EBs are also briefly discussed.

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Research Organization:: Ames Laboratory (AMES), Ames, IA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: ARO-DURIP; GBMF4533; FA9550-15-1-0478; N00014-15-1-2671; AC02-07CH11358

OSTI ID:: 1417351

Report Number(s):: IS-J-9551; TRN: US1801037

Journal Information:: ACS Photonics, Vol. 4, Issue 12; ISSN 2330-4022

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 18 works

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