Fabrication and characterization of p+-i-p+ type organic thin film transistors with electrodes of highly doped polymer

Tadaki, Daisuke; Ma, Teng; Zhang, Jinyu; Iino, Shohei; Hirano-Iwata, Ayumi; Kimura, Yasuo; Rosenberg, Richard A.; Niwano, Michio

doi:10.1063/1.4946888

Title: Fabrication and characterization of p⁺-i-p⁺ type organic thin film transistors with electrodes of highly doped polymer

Journal Article · Tue Apr 19 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4946888· OSTI ID:1391622

Tadaki, Daisuke ^[1]; Ma, Teng ^[1]; Zhang, Jinyu ^[2]; Iino, Shohei ^[2]; Hirano-Iwata, Ayumi ^[1]; Kimura, Yasuo ^[3]; Rosenberg, Richard A. ^[4]; Niwano, Michio ^[1]

Tohoku Univ., Sendai, (Japan); CREST, Japan Science and Technology Agency, Kawaguchi, Saitama (Japan)
Tohoku Univ., Sendai, (Japan)
CREST, Japan Science and Technology Agency, Kawaguchi, Saitama (Japan); Tokyo Univ. of Technology (Japan)
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)

Organic thin film transistors (OTFTs) have been explored because of their advantageous features such as light-weight, flexible, and large-area. For more practical application of organic electronic devices, it is very important to realize OTFTs that are composed only of organic materials. As such, in this paper, we have fabricated p⁺-i-p⁺ type of OTFTs in which an intrinsic (i) regioregular poly (3-hexylthiophene) (P3HT) layer is used as the active layer and highly doped p-type (p⁺) P3HT is used as the source and drain electrodes. The 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F₄-TCNQ) was used as the p-type dopant. A fabricating method of p⁺-i-p⁺ OTFTs has been developed by using SiO₂ and aluminum films as capping layers for micro-scaled patterning of the p⁺-P3HT electrodes. The characteristics of the OTFTs were examined using the photoelectron spectroscopy and electrical measurements. We demonstrated that the fabricated p⁺-i-p⁺ OTFTs work with carrier injection through a built-in potential at p⁺/i interfaces. We found that the p⁺-i-p⁺ OTFTs exhibit better FET characteristics than the conventional P3HT-OTFT with metal (Au) electrodes, indicating that the influence of a carrier injection barrier at the interface between the electrode and the active layer was suppressed by replacing the metal electrodes with p⁺-P3HT layers.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source (APS)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1391622

Alternate ID(s):: OSTI ID: 1421094

Journal Information:: Journal of Applied Physics, Vol. 119, Issue 15; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 5 works

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References (35)

Very-low-operating-voltage organic light-emitting diodes using a p-doped amorphous hole injection layer Zhou, X.; Pfeiffer, M.; Blochwitz, J. Applied Physics Letters, Vol. 78, Issue 4 https://doi.org/10.1063/1.1343849	journal	January 2001
Doped organic semiconductors: Physics and application in light emitting diodes Pfeiffer, M.; Leo, K.; Zhou, X. Organic Electronics, Vol. 4, Issue 2-3, p. 89-103 https://doi.org/10.1016/j.orgel.2003.08.004	journal	September 2003
Field‐effect mobility of poly(3‐hexylthiophene) Assadi, A.; Svensson, C.; Willander, M. Applied Physics Letters, Vol. 53, Issue 3 https://doi.org/10.1063/1.100171	journal	July 1988
Scaling down of organic thin film transistors: short channel effects and channel length-dependent field effect mobility Chen, Yi; Shih, Ishiang Journal of Materials Science, Vol. 44, Issue 1 https://doi.org/10.1007/s10853-008-3047-6	journal	January 2009
Design and realization of a flexible QQVGA AMOLED display with organic TFTs Steudel, Soeren; Myny, Kris; Schols, Sarah Organic Electronics, Vol. 13, Issue 9 https://doi.org/10.1016/j.orgel.2012.05.034	journal	September 2012
Direct structuring of C60 thin film transistors by photo-lithography under ambient conditions Kleemann, H.; Zakhidov, A. A.; Anderson, M. Organic Electronics, Vol. 13, Issue 3 https://doi.org/10.1016/j.orgel.2011.12.009	journal	March 2012
Solution-based metal electrode modification for improved charge injection in polymer field-effect transistors Frisch, J.; Glowatzki, H.; Janietz, S. Organic Electronics, Vol. 10, Issue 8 https://doi.org/10.1016/j.orgel.2009.08.008	journal	December 2009
Molecular doping effect in bottom-gate, bottom-contact pentacene thin-film transistors Wakatsuki, Yusuke; Noda, Kei; Wada, Yasuo Journal of Applied Physics, Vol. 110, Issue 5 https://doi.org/10.1063/1.3627240	journal	September 2011
Modified PEDOT-PSS Conducting Polymer as S/D Electrodes for Device Performance Enhancement of P3HT TFTs Xue, F.; Su, Y.; Varahramyan, K. IEEE Transactions on Electron Devices, Vol. 52, Issue 9 https://doi.org/10.1109/TED.2005.855062	journal	September 2005
The thermal-field emission model for carrier injection characteristics of an organic field effect transistor Kimura, Yasuo; Oba, Tomohisa; Shimakura, Naoko Applied Physics Letters, Vol. 94, Issue 7 https://doi.org/10.1063/1.3086273	journal	February 2009
Low-voltage organic electroluminescent devices using pin structures Huang, Jingsong; Pfeiffer, Martin; Werner, Ansgar Applied Physics Letters, Vol. 80, Issue 1 https://doi.org/10.1063/1.1432110	journal	January 2002
Charge-Transfer Localization in Molecularly Doped Thiophene-Based Donor Polymers Pingel, Patrick; Zhu, Lingyun; Park, Kue Surk The Journal of Physical Chemistry Letters, Vol. 1, Issue 13 https://doi.org/10.1021/jz100492c	journal	June 2010
Contact Doping and Ultrathin Gate Dielectrics for Nanoscale Organic Thin-Film Transistors Ante, Frederik; Kälblein, Daniel; Zschieschang, Ute Small, Vol. 7, Issue 9 https://doi.org/10.1002/smll.201002254	journal	April 2011
Flexible and stable solution-processed organic field-effect transistors Hwang, D. K.; Fuentes-Hernandez, C.; Kim, J. B. Organic Electronics, Vol. 12, Issue 7 https://doi.org/10.1016/j.orgel.2011.04.002	journal	July 2011
High performance polythiophene thin-film transistors doped with very small amounts of an electron acceptor Ma, Liang; Lee, Wi Hyoung; Park, Yeong Don Applied Physics Letters, Vol. 92, Issue 6 https://doi.org/10.1063/1.2883927	journal	February 2008
Current transport in short channel top-contact pentacene field-effect transistors investigated with the selective molecular doping technique Fujimori, F.; Shigeto, K.; Hamano, T. Applied Physics Letters, Vol. 90, Issue 19 https://doi.org/10.1063/1.2737418	journal	May 2007
Controlling Electrical Properties of Conjugated Polymers via a Solution-Based p-Type Doping Yim, Keng-Hoong; Whiting, Gregory L.; Murphy, Craig E. Advanced Materials, Vol. 20, Issue 17, p. 3319-3324 https://doi.org/10.1002/adma.200800735	journal	September 2008
Flexible organic transistors and circuits with extreme bending stability Sekitani, Tsuyoshi; Zschieschang, Ute; Klauk, Hagen Nature Materials, Vol. 9, Issue 12 https://doi.org/10.1038/nmat2896	journal	November 2010
Reversible and Irreversible Light-Induced p-Doping of P3HT by Oxygen Studied by Photoelectron Spectroscopy (XPS/UPS) Hintz, H.; Peisert, H.; Egelhaaf, H. -J. The Journal of Physical Chemistry C, Vol. 115, Issue 27 https://doi.org/10.1021/jp2032737	journal	June 2011
Contact resistance in organic transistors that use source and drain electrodes formed by soft contact lamination Zaumseil, Jana; Baldwin, Kirk W.; Rogers, John A. Journal of Applied Physics, Vol. 93, Issue 10 https://doi.org/10.1063/1.1568157	journal	May 2003
An experimental study of contact effects in organic thin film transistors Gundlach, D. J.; Zhou, L.; Nichols, J. A. Journal of Applied Physics, Vol. 100, Issue 2 https://doi.org/10.1063/1.2215132	journal	July 2006
Patterning effects on poly (3-hexylthiophene) organic thin film transistors using photolithographic processes Jia, Huiping; Gross, Erich K.; Wallace, Robert M. Organic Electronics, Vol. 8, Issue 1 https://doi.org/10.1016/j.orgel.2006.10.009	journal	February 2007
Pentacene Based Organic Thin Film Transistors as the Transducer for Biochemical Sensing in Aqueous Media Khan, Hadayat Ullah; Roberts, Mark E.; Knoll, Wolfgang Chemistry of Materials, Vol. 23, Issue 7 https://doi.org/10.1021/cm103685c	journal	April 2011
Non-destructive patterning of conducting-polymer devices using subtractive photolithography Balocco, C.; Majewski, L. A.; Song, A. M. Organic Electronics, Vol. 7, Issue 6 https://doi.org/10.1016/j.orgel.2006.07.009	journal	December 2006
Comprehensive picture of $p$ -type doping of P3HT with the molecular acceptor F $_{4}$ TCNQ Pingel, P.; Neher, D. Physical Review B, Vol. 87, Issue 11 https://doi.org/10.1103/PhysRevB.87.115209	journal	March 2013
Molecular doping of regioregular poly(3-hexylthiophene) layers by 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane investigated by infrared spectroscopy and electrical measurements Tadaki, Daisuke; Ma, Teng; Zhang, Jinyu Japanese Journal of Applied Physics, Vol. 54, Issue 9 https://doi.org/10.7567/JJAP.54.091602	journal	August 2015
Photoelectron spectroscopy study of systematically varied doping concentrations in an organic semiconductor layer using a molecular p-dopant Olthof, S.; Tress, W.; Meerheim, R. Journal of Applied Physics, Vol. 106, Issue 10 https://doi.org/10.1063/1.3259436	journal	November 2009
Highly power efficient organic light-emitting diodes with a p-doping layer Chang, Chan-Ching; Hsieh, Ming-Ta; Chen, Jenn-Fang Applied Physics Letters, Vol. 89, Issue 25 https://doi.org/10.1063/1.2405856	journal	December 2006
The role of molybdenum oxide as anode interfacial modification in the improvement of efficiency and stability in organic light-emitting diodes Wang, Fengxia; Qiao, Xianfeng; Xiong, Tao Organic Electronics, Vol. 9, Issue 6 https://doi.org/10.1016/j.orgel.2008.07.009	journal	December 2008
Explaining the different efficiency behaviors of PHOLEDs with/without a hole injection barrier at the hole transport layer/emitter layer interface Zamani Siboni, Hossein; Aziz, Hany Organic Electronics, Vol. 14, Issue 10 https://doi.org/10.1016/j.orgel.2013.06.021	journal	October 2013
Modified transmission-line method for contact resistance extraction in organic field-effect transistors Xu, Yong; Gwoziecki, R.; Chartier, I. Applied Physics Letters, Vol. 97, Issue 6 https://doi.org/10.1063/1.3479476	journal	August 2010
Control of threshold voltage in pentacene thin-film transistors using carrier doping at the charge-transfer interface with organic acceptors Abe, Y.; Hasegawa, T.; Takahashi, Y. Applied Physics Letters, Vol. 87, Issue 15 https://doi.org/10.1063/1.2099540	journal	October 2005
Thin-Film Permeation-Barrier Technology for Flexible Organic Light-Emitting Devices Lewis, J.S.; Weaver, M.S. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 10, Issue 1, p. 45-57 https://doi.org/10.1109/JSTQE.2004.824072	journal	January 2004
Effect of molecular p-doping on hole density and mobility in poly(3-hexylthiophene) Pingel, P.; Schwarzl, R.; Neher, D. Applied Physics Letters, Vol. 100, Issue 14 https://doi.org/10.1063/1.3701729	journal	April 2012
The chemical and structural origin of efficient p-type doping in P3HT Duong, Duc T.; Wang, Chenchen; Antono, Erin Organic Electronics, Vol. 14, Issue 5 https://doi.org/10.1016/j.orgel.2013.02.028	journal	May 2013

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