Stable p-i-n FAPbBr3 devices with improved efficiency using sputtered ZnO as electron transport layer [Stable p-i-n FAPbBr3 devices with improved efficiency using sputtered inorganic electron transport layer]

Subbiah, Anand S.; Agarwal, Sumanshu; Mahuli, Neha; Nair, Pradeep; van Hest, Maikel; Sarkar, Shaibal K.

doi:10.1002/admi.201601143

Title: Stable p-i-n FAPbBr₃ devices with improved efficiency using sputtered ZnO as electron transport layer [Stable p-i-n FAPbBr₃ devices with improved efficiency using sputtered inorganic electron transport layer]

Journal Article · Fri Feb 10 00:00:00 EST 2017 · Advanced Materials Interfaces

DOI:https://doi.org/10.1002/admi.201601143· OSTI ID:1353425

Subbiah, Anand S. ^[1]; Agarwal, Sumanshu ^[1]; Mahuli, Neha ^[1]; Nair, Pradeep ^[1]; van Hest, Maikel ^[2]; Sarkar, Shaibal K. ^[1]

IIT Bombay, Mumbai (India)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

Radio‐frequency magnetron sputtering is demonstrated as an effective tool to deposit highly crystalline thin zinc oxide (ZnO) layer directly on perovskite absorber as an electron transport layer (ETL). As an absorber, formamidinium lead tribromide (FAPbBr ₃ ) is fabricated through a modified single‐step solution process using hydrogen bromide (HBr) as an additive resulting in complete surface coverage and highly crystalline material. A planar p–i–n device architecture with spin‐coated poly‐(3,4‐ethylenedioxythiophene):poly‐styrenesulfonic acid (PEDOT:PSS) as hole transport material (HTM) and sputtered ZnO as ETL results in a short circuit current density of 9.5 mA cm ⁻² and an open circuit potential of 1.19 V. Numerical simulations are performed to validate the underlying loss mechanisms. The use of phenyl C ₆₀ butyric acid methyl ester (PCBM) interface layer between FAPbBr ₃ and sputter‐coated ZnO offers shielding from potential plasma‐related interface damage. The modified interface results in a better device efficiency of 8.3% with an open circuit potential of 1.35 V. Such devices offer better stability under continuous illumination under ambient conditions in comparison with the conventional organic ETL (PCBM)‐based devices.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1353425

Alternate ID(s):: OSTI ID: 1400608

Report Number(s):: NREL/JA-5K00-68057

Journal Information:: Advanced Materials Interfaces, Vol. 4, Issue 8; ISSN 2196-7350

Publisher:: Wiley-VCHCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 24 works

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Adjusting the Introduction of Cations for Highly Efficient and Stable Perovskite Solar Cells Based on (FAPbI ₃ ) _0.9 (FAPbBr ₃ ) _0.1 Liu, Guozhen; Zheng, Haiying; Zhu, Liangzheng ChemSusChem, Vol. 11, Issue 14 https://doi.org/10.1002/cssc.201800658	journal	July 2018
High Open Circuit Voltage for Perovskite Solar Cells with S,Si-Heteropentacene-Based Hole Conductors: High Open Circuit Voltage for Perovskite Solar Cells with S,Si-Heteropentacene-Based Hole Conductors Dar, M. Ibrahim; Arora, Neha; Steck, Christopher European Journal of Inorganic Chemistry, Vol. 2018, Issue 41 https://doi.org/10.1002/ejic.201800680	journal	November 2018
Towards All-Inorganic Transport Layers for Wide-Band-Gap Formamidinium Lead Bromide-Based Planar Photovoltaics Subbiah, Anand S.; Mahuli, Neha; Agarwal, Sumanshu Energy Technology, Vol. 5, Issue 10 https://doi.org/10.1002/ente.201700361	journal	September 2017
Recent developments in flexible photodetectors based on metal halide perovskite Hao, Dandan; Zou, Jun; Huang, Jia InfoMat, Vol. 2, Issue 1 https://doi.org/10.1002/inf2.12053	journal	November 2019
Benchmarking Chemical Stability of Arbitrarily Mixed 3D Hybrid Halide Perovskites for Solar Cell Applications García‐Fernández, Alberto; Juarez‐Perez, Emilio J.; Castro‐García, Socorro Small Methods, Vol. 2, Issue 10 https://doi.org/10.1002/smtd.201800242	journal	August 2018

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Title: Stable p-i-n FAPbBr3 devices with improved efficiency using sputtered ZnO as electron transport layer [Stable p-i-n FAPbBr3 devices with improved efficiency using sputtered inorganic electron transport layer]

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Cited By (5)

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Title: Stable p-i-n FAPbBr₃ devices with improved efficiency using sputtered ZnO as electron transport layer [Stable p-i-n FAPbBr₃ devices with improved efficiency using sputtered inorganic electron transport layer]