Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN

Koehl, William F.; Diler, Berk; Whiteley, Samuel J.; Bourassa, Alexandre; Son, N. T.; Janzén, Erik; Awschalom, David D.

doi:10.1103/PhysRevB.95.035207

Title: Resonant optical spectroscopy and coherent control of $C r^{4 +}$ spin ensembles in SiC and GaN

Journal Article · Sun Jan 15 00:00:00 EST 2017 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.95.035207· OSTI ID:1353030

Koehl, William F. ^[1]; Diler, Berk ^[2]; Whiteley, Samuel J. ^[2]; Bourassa, Alexandre ^[2]; Son, N. T. ^[3]; Janzén, Erik ^[3]; Awschalom, David D. ^[2]

Univ. of Chicago, Chicago, IL (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
Univ. of Chicago, Chicago, IL (United States)
Linkoping Univ., Linkoping (Sweden)

Spins bound to point defects are increasingly viewed as an important resource for solid-state implementations of quantum information technologies. In particular, there is a growing interest in the identification of new classes of defect spin that can be controlled optically. Here we demonstrate ensemble optical spin polarization and optically detected magnetic resonance (ODMR) of the S = 1 electronic ground state of chromium (Cr⁴⁺) impurities in silicon carbide (SiC) and gallium nitride (GaN). Polarization is made possible by the narrow optical linewidths of these ensembles (< 8.5 GHz), which are similar in magnitude to the ground state zero-field spin splitting energies of the ions at liquid helium temperatures. We therefore are able to optically resolve individual spin sublevels within the ensembles at low magnetic fields using resonant excitation from a cavity-stabilized, narrow-linewidth laser. Additionally, these near-infrared emitters possess exceptionally weak phonon sidebands, ensuring that > 73% of the overall optical emission is contained with the defects’ zero-phonon lines. Lastly, these characteristics make this semiconductor-based, transition metal impurity system a promising target for further study in the ongoing effort to integrate optically active quantum states within common optoelectronic materials.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Materials Sciences and Engineering Division; Air Force Research Laboratory (AFRL), Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF); U.S. Army Research Laboratory, U.S. Army Research Office (ARO); Knut and Alice Wallenberg Foundation; Linkopng Linnaeus Initiative for Novel Functional Materials (LiLi-NFM)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1353030

Alternate ID(s):: OSTI ID: 1341283

Journal Information:: Physical Review B, Vol. 95, Issue 3; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide Diler, Berk; Whiteley, Samuel J.; Anderson, Christopher P. npj Quantum Information, Vol. 6, Issue 1 https://doi.org/10.1038/s41534-020-0247-7	journal	January 2020
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Title: Resonant optical spectroscopy and coherent control of $C r^{4 +}$ spin ensembles in SiC and GaN