Planar field emitters and high efficiency photocathodes based on ultrananocrystalline diamond
A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 10.sup.12 to about 10.sup.14 emitting sites per cm.sup.2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-06CH11357; SC0009572
- Assignee:
- UCHICAGO ARGONNE, LLC (Chicago, IL)
- Patent Number(s):
- 9,418,814
- Application Number:
- 14/594,949
- OSTI ID:
- 1295657
- Resource Relation:
- Patent File Date: 2015 Jan 12
- Country of Publication:
- United States
- Language:
- English
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