Growth of Wide Band-gap Complex Oxides on GaN by Molecular-Beam Epitaxy.
Conference
·
OSTI ID:1124334
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1124334
- Report Number(s):
- SAND2010-1017C; 493022
- Resource Relation:
- Conference: Proposed for presentation at the Lawrence Symposium on Epitaxy held February 24-26, 2010 in Scottsdale, AZ.
- Country of Publication:
- United States
- Language:
- English
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