Study on thermal annealing of cadmium zinc telluride (CZT) crystals
Cadmium Zinc Telluride (CZT) has attracted increasing interest with its promising potential as a room-temperature nuclear-radiation-detector material. However, different defects in CZT crystals, especially Te inclusions and dislocations, can degrade the performance of CZT detectors. Post-growth annealing is a good approach potentially to eliminate the deleterious influence of these defects. At Brookhaven National Laboratory (BNL), we built up different facilities for investigating post-growth annealing of CZT. Here, we report our latest experimental results. Cd-vapor annealing reduces the density of Te inclusions, while large temperature gradient promotes the migration of small-size Te inclusions. Simultaneously, the annealing lowers the density of dislocations. However, only-Cd-vapor annealing decreases the resistivity, possibly reflecting the introduction of extra Cd in the lattice. Subsequent Te-vapor annealing is needed to ensure the recovery of the resistivity after removing the Te inclusions.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- DOE/Office Of Nonproliferation & National Security
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 1013507
- Report Number(s):
- BNL-93957-2010-CP; R&D Project: 10407; 10407; NN2001000; TRN: US1102496
- Resource Relation:
- Conference: 2010 SPIE Optics + Photonics; San Diego, California; 20100801 through 20100805
- Country of Publication:
- United States
- Language:
- English
Similar Records
Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors
Electric Field Distribution of Cadmium Zinc Telluride (CZT)