Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

Patent · Tue Jul 13 00:00:00 EDT 2010

OSTI ID:1013008

Perkins, John ^[1]; Ginley, David ^[2]; Taylor, Matthew ^[3]; Neuman, George A ^[4]; Luten, Henry A ^[4]; Forgette, Jeffrey A ^[5]; Anderson, John S ^[4]

---

1. Boulder, CO
2. Evergreen, CO
3. Golden, CO
4. Holland, MI
5. Hudsonville, MI

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

• Research Organization: Alliance for Sustainable Energy, LLC (Golden, CO)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC36-99GO10337
• Assignee: Alliance for Sustainable Energy, LLC (Golden, CO)
• Patent Number(s): 7,754,352
• Application Number: 11/738,344
• OSTI ID: 1013008
• Country of Publication: United States
• Language: English