Evidence for a correct SiO{sub 2} voltage acceleration model
Conference
·
OSTI ID:10122461
- Sandia National Labs., Albuquerque, NM (United States)
- National Semiconductor Corp., West Jordan, UT (United States)
- National Semiconductor Corp., Santa Clara, CA (United States)
We present experimental evidence that SiO{sub 2} breakdown is best described by the E-model of Baglee and McPherson as opposed to the 1/E model of Lee, Chen and Hu. The experiment was performed on 1765 fully processed capacitors over a range of electric fields of 7.25 MV/cm to 11 MV/cm and temperatures of 25C to 200C. In addition, we also present a curious data point at low electric fields that we ascribe to a change in breakdown mechanism.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10122461
- Report Number(s):
- SAND-93-1830C; CONF-9310147-2; ON: DE94006578; BR: GB0103012
- Resource Relation:
- Conference: 1993 international integrated reliability workshop,Lake Tahoe, CA (United States),24-27 Oct 1993; Other Information: PBD: [1993]
- Country of Publication:
- United States
- Language:
- English
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