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Title: Ion-assisted laser deposition of intermediate layers for YBa2Cu3O7-δ thin film growth on polycrystalline and amorphous substrates

Thesis/Dissertation ·
DOI:https://doi.org/10.2172/10103394· OSTI ID:10103394
 [1]
  1. Univ. of California, Berkeley, CA (United States)

The growth of YBa2Cu3O7-δ (YBCO) high-temperature superconductor thin films has largely been limited to deposition on single-crystal substrates to date. In order to expand the range of potential applications, growth on polycrystalline and amorphous substrates is desirable. In particular, the deposition of YBCO thin films with high critical current densities on polycrystalline metal alloys would allow the manufacture of superconducting tapes. However, it is shown that it is not possible to grow YBCO thin films directly on this type of substrate due to chemical and structural incompatibility. This work investigates the use of a yttria-stabilized zirconia (YSZ) intermediate layer to address this problem. An ion-assisted pulsed-laser deposition process is developed to provide control of orientation during the growth of the YSZ layers. The important properties of YBCO and YSZ are summarized and the status of research on thin film growth of these materials is reviewed. An overview of the pulsed-laser deposition (PLD) technique is presented. The use of ion-assisted deposition techniques to control thin film properties is discussed.

Research Organization:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE); Department of Defense (DOD)
DOE Contract Number:
AC03-76SF00098
OSTI ID:
10103394
Report Number(s):
LBL-36149; ON: DE95003507; TRN: 95:000351
Resource Relation:
Other Information: TH: Thesis (Ph.D.); PBD: Nov 1993
Country of Publication:
United States
Language:
English