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Title: Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells

Patent ·
OSTI ID:871430
 [1];  [2];  [3];  [4];  [4];  [3];  [2]
  1. Littleton, CO
  2. Golden, CO
  3. Lakewood, CO
  4. Denver, CO
+ Show Author Affiliations

High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
DOE Contract Number:
1326
Assignee:
Davis, Joseph & Negley (Austin, TX)
Patent Number(s):
US 5730852
Application Number:
08/571,150
OSTI ID:
871430
Country of Publication:
United States
Language:
English

References (11)

Solution Growth and Electrodeposited CuInSe2Thin Films journal October 1983
Electrodeposition of CuInX () thin films journal January 1986
Recrystallization of electrodeposited copper indium diselenide thin films in an atmosphere of elemental selenium journal May 1994
Solar cells with improved efficiency based on electrodeposited copper indium diselenide thin films journal May 1994
Pulse Plated Electrodeposition of CuInSe2 Films journal July 1987
Electrochemical synthesis of photoactive In2Se3 thin films journal December 1987
Low cost methods for the production of semiconductor films for CuInSe2/CdS solar cells journal June 1987
Accelerated publication 17.1% efficient Cu(In,Ga)Se 2 -based thin-film solar cell journal January 1995
Device quality thin films of CuInSe2 by a one-step electrodeposition process journal May 1988
Preparation and Characterization of Electrodeposited CuInSe 2 Thin Films journal April 1993
Optical properties of electrochemically deposited CuInSe2 thin films journal November 1991

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Related Subjects

preparation
cuxinygazsen
0-2
z
0-3
precursor
films
electrodeposition
fabricating
efficiency
solar
cells
quality
copper-indium-gallium-diselenide
useful
production
prepared
electrodepositing
constituent
metals
glass
substrate
followed
physical
vapor
deposition
copper
selenium
indium
adjust
final
stoichiometry
film
approximately
cu
voltage
1-100
khz
combination
dc
improves
morphology
growth
rate
deposited
solution
comprising
organic
solvent
conjunction
increased
cathodic
potential
increase
gallium
content
electrodeposited
efficiency solar
precursor film
precursor films
growth rate
organic solvent
solar cell
solar cells
vapor deposition
dc voltage
solution comprising
physical vapor
constituent metal
/205/136/427/438/