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Title: Preparation of CIGS-based solar cells using a buffered electrodeposition bath

Patent ·
OSTI ID:920028

A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-83CH10093
Assignee:
Davis, Joseph & Negley (Mill Valley, CA)
Patent Number(s):
7,297,868
Application Number:
10/627,322
OSTI ID:
920028
Country of Publication:
United States
Language:
English

References (2)

Electrodeposition of CuInS2 from aqueous solution (II) electrodeposition of CuInS2 film journal September 1996
Amine-quinone polyurethanes as binders for metal particle tape journal November 1993