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Title: Multijunction photovoltaic device and fabrication method

Patent ·
OSTI ID:868930

A multijunction photovoltaic device includes first and second amorphous silicon PIN photovoltaic cells in a stacked arrangement. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one or the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers. The disclosed device is fabricated by a glow discharge process.

DOE Contract Number:
ZM-1-19033-3
Assignee:
Solarex Corporation (Rockville, MD)
Patent Number(s):
US 5246506
Application Number:
07/730,177
OSTI ID:
868930
Country of Publication:
United States
Language:
English

References (3)

Improving tunneling junction in amorphous silicon tandem solar cells journal May 1990
Stacked solar cells of amorphous silicon journal January 1980
A stable 10% solar cell with a-Si/a-Si double junction structure conference January 1990