Multijunction photovoltaic device and fabrication method
Patent
·
OSTI ID:868930
- Jamison, PA
- Furlong, PA
A multijunction photovoltaic device includes first and second amorphous silicon PIN photovoltaic cells in a stacked arrangement. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one or the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers. The disclosed device is fabricated by a glow discharge process.
- DOE Contract Number:
- ZM-1-19033-3
- Assignee:
- Solarex Corporation (Rockville, MD)
- Patent Number(s):
- US 5246506
- Application Number:
- 07/730,177
- OSTI ID:
- 868930
- Country of Publication:
- United States
- Language:
- English
Improving tunneling junction in amorphous silicon tandem solar cells
|
journal | May 1990 |
Stacked solar cells of amorphous silicon
|
journal | January 1980 |
A stable 10% solar cell with a-Si/a-Si double junction structure
|
conference | January 1990 |
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multijunction
photovoltaic
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amorphous
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stacked
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interface
layer
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doped
compound
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bandgap
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adjacent
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ohmic
contact
cell
conductivity
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tunnel
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disclosed
fabricated
glow
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silicon compound
multijunction photovoltaic
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tunnel junction
photovoltaic cells
amorphous silicon
glow discharge
photovoltaic device
ohmic contact
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adjacent cell
doped silicon
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adjacent layers
stacked arrangement
interface layer
cell layer
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discharge process
/136/438/
photovoltaic
device
fabrication
method
amorphous
silicon
cells
stacked
arrangement
interface
layer
composed
doped
compound
disposed
bandgap
respective
n-
p-type
adjacent
layers
forms
ohmic
contact
cell
conductivity
type
tunnel
junction
disclosed
fabricated
glow
discharge
process
silicon compound
multijunction photovoltaic
fabrication method
tunnel junction
photovoltaic cells
amorphous silicon
glow discharge
photovoltaic device
ohmic contact
photovoltaic cell
adjacent cell
doped silicon
conductivity type
adjacent layers
stacked arrangement
interface layer
cell layer
layer forms
discharge process
/136/438/