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Title: Diagnostics of glow discharges used to produce hydrogenated amorphous silicon films. Subcontract report, 15 April 1984-14 April 1985

Technical Report ·
DOI:https://doi.org/10.2172/5280500· OSTI ID:5280500

Measurements of monosilane and disilane radicals were made at the surface of dc glow discharges (GD) in pure silane and silane-argon mixtures. These observations were interpreted as discharge kinetic models. It was inferred that the dominant radical, SiH/sub 3/, is produced in the gas and is primarily responsible for film growth. The heavier radicals observed in the gas appear to be a consequence of surface reactions, as is the disilane, a major product of the monosilane decomposition. A detailed model of the ion chemistry in the discharge was formulated to derive theoretical distributions of ions at the cathodes of low-pressure dc discharges. Chemical vapor deposition (CVD) rates of silane and disilane, measured previously in the laboratory, have now also been interpreted in detail to yield a self-consistent model for the CVD process. This model identifies and quantifies the role of H/sub 2/ as an inhibitor of silane GD and CVD deposition. Implications of these discoveries to deposition rates and film properties are discussed.

Research Organization:
National Bureau of Standards, Boulder, CO (United States)
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5280500
Report Number(s):
SERI/STR-211-2760; ON: DE85016847
Country of Publication:
United States
Language:
English