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Title: Low-band-gap, amorphous-silicon-based alloys by chemical vapor deposition: Annual subcontract report, 1 October 1985-31 January 1986

Technical Report ·
DOI:https://doi.org/10.2172/6822853· OSTI ID:6822853

This research was conducted to determine the potential of photochemical vapor deposition (photo-CVD) for producing high-quality, low-band-gap amorphous silicon germanium alloys for use in high-efficiency, multijunction, thin-film photovoltaic solar cells. A photo-CVD reactor for mercury-sensitized photolysis of silane-germane and disilane-germane mixtures was developed. Alloy thin films of undoped a-Si/sub 1-x/Ge/sub x/:H were deposited using mercury vapor mixed with SiH/sub 4/ or Si/sub 2/H/sub 6/, GeH/sub 4/, and diluent gas of Ar, He, or H/sub 2/. Materials properties were characterized by measurements of Ge content, optical transmission and reflection, and dark and photo-conductivity. Opto-electronic properties of photo-CVD a-Si/sub 1-x/Ge/sub x/:H were found to be comparable to glow discharge and sputtered materials. Moreover, p-i-n solar cells with low-band-gap i-layers were able to be fabricated by photo-CVD.

Research Organization:
Delaware Univ., Newark (USA). Inst. of Energy Conversion; Solar Energy Research Inst. (SERI), Golden, CO (United States)
DOE Contract Number:
AC02-83CH10093
OSTI ID:
6822853
Report Number(s):
SERI/STR-211-3035; ON: DE87001137
Resource Relation:
Other Information: Portions of this document are illegible in microfiche products. Original copy available until stock is exhausted
Country of Publication:
United States
Language:
English