Microwave annealing of ion implanted 6H-SiC
- George Mason Univ., Fairfax, VA (United States)
- Oak Ridge National Lab., TN (United States)
- Naval Research Lab., Washington, DC (United States)
- FM Technologies Inc., Fairfax, VA (United States)
Microwave rapid thermal annealing has been utilized to remove the lattice damage caused by nitrogen (N) ion-implantation as well as to activate the dopant in 6H-SiC. Samples were annealed at temperatures as high as 1,400 C, for 10 min. Van der Pauw Hall measurements indicate an implant activation of 36%, which is similar to the value obtained for the conventional furnace annealing at 1,600 C. Good lattice quality restoration was observed in the Rutherford backscattering and photoluminescence spectra.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 244606
- Report Number(s):
- CONF-950412-66; ON: DE96010667; CNN: Grant ECS-9319885; TRN: AHC29613%%81
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 17-21 Apr 1995; Other Information: PBD: May 1996
- Country of Publication:
- United States
- Language:
- English
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