Experimental verification of epsilon-near-zero plasmon polariton modes in degenerately doped semiconductor nanolayers
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Texas A&M Univ.-Corpus Christi, Corpus Christi, TX (United States)
- AMRDEC, Charles M. Bowden Research Lab., Redstone Arsenal, AL (United States). National Research Council
Here, we investigate optical polariton modes supported by subwavelength-thick degenerately doped semiconductor nanolayers (e.g. indium tin oxide) on glass in the epsilon-near-zero (ENZ) regime. The dispersions of the radiative (R, on the left of the light line) and non-radiative (NR, on the right of the light line) ENZ polariton modes are experimentally measured and theoretically analyzed through the transfer matrix method and the complex-frequency/real-wavenumber analysis, which are in remarkable agreement. We observe directional near-perfect absorption using the Kretschmann geometry for incidence conditions close to the NR-ENZ polariton mode dispersion. Along with field enhancement, this provides us with an unexplored pathway to enhance nonlinear optical processes and to open up directions for ultrafast, tunable thermal emission.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1297916
- Report Number(s):
- SAND-2016-7499J; OPEXFF; 646521
- Journal Information:
- Optics Express, Vol. 24, Issue 16; ISSN 1094-4087
- Publisher:
- Optical Society of America (OSA)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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