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Title: Methods for forming thin-film heterojunction solar cells from I-III-VI2

Patent ·
OSTI ID:1176687

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (≅2.5 $$\mu$$m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the

Research Organization:
The Boeing Company, Seattle, WA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
EG-77-C-01-4042; XJ-9-8021-1
Assignee:
The Boeing Company (Seattle, WA)
Patent Number(s):
RE31968
Application Number:
06/620,637
OSTI ID:
1176687
Resource Relation:
Patent File Date: 1984 Jun 14
Country of Publication:
United States
Language:
English

References (20)

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Photovoltaic properties and junction formation in CuInSe 2 journal June 1977
Multicomponent tetrahedral compounds for solar cells journal July 1977
Growth of CuInSe2 films using molecular beam epitaxy journal March 1979
Photovoltaic properties ofpnjunctions in CuInS2 journal July 1979
Photovoltaic Effect in CuInSe2/CdS Heterojunctions journal May 1977
High photocurrent polycrystalline thin‐film CdS/CuInSe2solar cella journal March 1980
Growth of CuInSe2on CdS using molecular beam epitaxy journal January 1979
Motion of pn junctions in CuInSe 2 journal April 1976
CuInSe 2 /CdS heterojunction photovoltaic detectors journal October 1974
Growth and characterization of thin‐film compound semiconductor photovoltaic heterojunctions journal January 1977
Auger electron spectroscopy studies of I–III–VI2 chalcopyrite compounds journal March 1978
Structural and electrical properties of CuInSe2 epitaxial layers prepared by single-source evaporation journal December 1980
Preparation of amorphous CuInSe2 thin films journal June 1980
Thin‐film CuInSe 2 /CdS heterojunction solar cells journal August 1976
Some observations on the effect of evaporation source temperature on the composition of CuInSe2 thin films journal January 1980
Auger analysis of CdS—CuInSe2thin-film solar cells journal April 1977
Copper Indium Diselenide for CdS: CuInSe2 Solar Cells book January 1981
p −InP/ n −CdS solar cells and photovoltaic detectors journal March 1975
Efficient CuInSe 2 /CdS solar cells journal July 1975