Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2
- Bellevue, WA
- Seattle, WA
An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5.mu.m to .congruent.5.0.mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- DOE Contract Number:
- EG-77-C-01-4042
- Assignee:
- Boeing Company (Seattle, WA)
- Patent Number(s):
- US 4335266
- OSTI ID:
- 864241
- Country of Publication:
- United States
- Language:
- English
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Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI.sub.2 chalcopyrite compounds
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forming
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i-iii-vi
improved
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government
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pursuant
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subcontract
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transient p-n
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p-n homojunction
n-type material
material defining
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conversion efficiency
active material
electrical energy
solar cell
semiconductor material
solar cells
semiconductor layer
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material preferably
transient n-type
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vacuum deposited
resistivity n-type
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ternary materials
thin-film heterojunction
juxtaposed regions
light-to-electrical energy
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elemental constituents
superimposed region
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discrete juxtaposed
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type semiconductor
preferably comprise
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